BAS81, BAS82, BAS83 www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time AEC-Q101 qualified DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available APPLICATIONS MECHANICAL DATA HF-detector Case: MiniMELF (SOD-80) Protection circuit Weight: approx. 31 mg Diode for low currents with a low supply voltage Cathode band color: black Small battery charger Packaging codes/options: Power supplies GS18/10K per 13 reel (8 mm tape), 10K/box DC/DC converter for notebooks GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS81 V = 40 V BAS81-GS18 or BAS81-GS08 Single Tape and reel R BAS82 V = 50 V BAS82-GS18 or BAS82-GS08 Single Tape and reel R BAS83 V = 60 V BAS83-GS18 or BAS83-GS08 Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS81 V 40 V R Reverse voltage BAS82 V 50 V R BAS83 V 60 V R Peak forward surge current t = 1 s I 500 mA p FSM Repetitive peak forward current I 150 mA FRM Forward continuous current I 30 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Rev. 2.0, 02-Jun-17 Document Number: 85509 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS81, BAS82, BAS83 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1 mA V 330 mV F F Forward voltage I = 1 mA V 410 mV F F I = 15 mA V 1000 mV F F Reserve current V = V I 200 nA R Rmax. R Diode capacitance V = 1 V, f = 1 MHz C 1.6 pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 14 1000 V = 60 V R 12 100 R = 540 K/W thJA T = 125 C 10 j 10 8 T = 25 C j 6 1 PP - Limit at 100 % - Limit at 100 %VV R R R R 4 P - Limit at 80 % V 0.1 R R 2 0.01 0 0 0.5 1 1.5 2.0 25 50 75 100 125 150 15794 T - Junction Temperature (C) 15796 V - Forward Voltage (V) j F Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 2.0 V = V R RRM 1.8 f = 1 MHz 1.6 100 1.4 1.2 10 1.0 0.8 0.6 1 0.4 0.2 0.1 0 0.1 1 10 100 25 50 75 100 125 150 15797 V - Reverse Voltage (V) 15795 T - Junction Temperature (C) j R Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.0, 02-Jun-17 Document Number: 85509 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R C - Diode Capacitance (pF) I- Forward Current (mA) D F