BAV20WS-G3-08 Vishay

BAV20WS-G3-08 electronic component of Vishay
BAV20WS-G3-08 Vishay
BAV20WS-G3-08 Diodes - General Purpose, Power, Switching
BAV20WS-G3-08  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BAV20WS-G3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV20WS-G3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

Part No. BAV20WS-G3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
Datasheet: BAV20WS-G3-08 Datasheet (PDF)
Price (USD)
1: USD 0.18 ea
Line Total: USD 0.18 
Availability : 11130
  
Ship by Tue. 12 Aug to Thu. 14 Aug
QtyUnit Price
1$ 0.18
10$ 0.1213
100$ 0.0888
500$ 0.0667
1000$ 0.0572
2500$ 0.0484
5000$ 0.0418
10000$ 0.0352
15000$ 0.0352

Availability 11130
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.18
10$ 0.1213
100$ 0.0888
500$ 0.0667
1000$ 0.0572
2500$ 0.0484
5000$ 0.0418
10000$ 0.0352
15000$ 0.0352

   
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We are delighted to provide the BAV20WS-G3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV20WS-G3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified Base P/N-G3 - green, commercial grade Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV19WS-G V = 100 V BAV19WS-G3-08 or BAV19WS-G3-18 AS Single Tape and reel R BAV20WS-G V = 150 V BAV20WS-G3-08 or BAV20WS-G3-18 AT Single Tape and reel R BAV21WS-G V = 200 V BAV21WS-G3-08 or BAV21WS-G3-18 AU Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL SYMBOL VALUE UNIT BAV19WS-G V 100 V R Continuous reverse voltage BAV20WS-G V 150 V R BAV21WS-G V 200 V R BAV19WS-G V 120 V RRM Repetitive peak reverse voltage BAV20WS-G V 200 V RRM BAV21WS-G V 250 V RRM (1) Forward continuous current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resistive load (1) Repetitive peak forward current f 50 Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A J FSM Power dissipation P 200 mW tot Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 625 K/W thJA Thermal resistance junction to lead R 450 K/W thJL Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.7, 12-Jul-17 Document Number: 83423 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19WS-G I 100 nA R R V = 100 V, T = 100 C BAV19WS-G I 15 A R j R V = 150 V BAV20WS-G I 100 nA R R Reverse leakage current V = 150 V, T = 100 C BAV20WS-G I 15 A R j R V = 200 V BAV21WS-G I 100 nA R R V = 200 V, T = 100 C BAV21WS-G I 15 A R j R Dynamic Forward resistance I = 10 mA r 5 F f Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 100 C j 100 200 10 150 25 C 1 100 50 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200 18858 V - Forward Voltage (V) 18864 T - Ambient Temperature (C) F amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.7, 12-Jul-17 Document Number: 83423 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) OF F P - Admissible Power Dissipation (mW) r - Dynamic Forward Resistance () tot f

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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