Product Information

BPV22NF

Hot BPV22NF electronic component of Vishay

Datasheet
Photodiodes Sideview 790-1050nm +/-60 deg

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

19: USD 0.4034 ea
Line Total: USD 7.66

3432 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
162 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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BPV22NF
Vishay

1 : USD 0.4833
10 : USD 0.4585
100 : USD 0.4494
500 : USD 0.4494
1000 : USD 0.4494

3818 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 4000
Multiples : 3937

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BPV22NF
Vishay

4000 : USD 0.4808

21079 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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BPV22NF
Vishay

1 : USD 0.8648
10 : USD 0.6164
100 : USD 0.4956
500 : USD 0.46
1000 : USD 0.4152
2000 : USD 0.4152
4000 : USD 0.4071
12000 : USD 0.4014

1776 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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BPV22NF
Vishay

1 : USD 1.001
3 : USD 0.5421
25 : USD 0.4771
100 : USD 0.4628

3432 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 19
Multiples : 1

Stock Image

BPV22NF
Vishay

19 : USD 0.4034
100 : USD 0.3966
500 : USD 0.3786
1000 : USD 0.3553
2000 : USD 0.3517
4000 : USD 0.3447

162 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 17
Multiples : 1

Stock Image

BPV22NF
Vishay

17 : USD 0.4585
100 : USD 0.4494

3880 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 18
Multiples : 1

Stock Image

BPV22NF
Vishay

18 : USD 0.513

3677 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 19
Multiples : 1

Stock Image

BPV22NF
Vishay

19 : USD 0.5032
100 : USD 0.4966
500 : USD 0.4712
1000 : USD 0.4646
2000 : USD 0.4634
4000 : USD 0.4541

300 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 61
Multiples : 1

Stock Image

BPV22NF
Vishay

61 : USD 0.6117
100 : USD 0.5665

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Width
Brand
Cnhts
Hts Code
If - Forward Current
Mxhts
Noise Equivalent Power - Nep
Pd - Power Dissipation
Photocurrent
Product Type
Responsivity
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
Brand Category
LoadingGif

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BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: side view Dimensions (in mm): 4.5 x 5 x 6 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters Fast response times 94 8633 Angle of half sensitivity: = 60 Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BPV22NF is a PIN photodiode with high speed and high APPLICATIONS radiant sensitivity in a black, plastic package with side view High speed detector for infrared radiation lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. The lens achieves 80 % Infrared remote control and free air data transmission of sensitivity improvement in comparison with flat package. systems, e.g. in combination with TSFFxxxx series IR BPV22NFL has long leads, other specifications like emitters BPV22NF. PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV22NF 85 60 790 to 1050 BPV22NFL 85 60 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV22NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV22NFL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.9, 21-Feb-12 Document Number: 81509 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV22NF, BPV22NFL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Serial resistance V = 12 V, f = 1 MHz R 400 R S 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 370 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 80 A e k 2 E = 1 mW/cm , = 870 nm, e Reverse light current I 55 85 A ra V = 5 V R 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I TK 0.1 %/K ra Ira V = 10 V R V = 5 V, = 870 nm s()0.57 A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s()0.6 A/W R Angle of half sensitivity 60 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 Quantum efficiency = 950 nm 90 % -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R 12 Detectivity V = 10 V, = 950 nm D* 6 x 10 cmHz/W R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f V = 12 V, R = 1 k, = 870 nm f 4MHz R L c Cut-off frequency V = 12 V, R = 1 k, = 950 nm f 1MHz R L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.9, 21-Feb-12 Document Number: 81509 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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