BYG10J-E3/TR3 Vishay

BYG10J-E3/TR3 electronic component of Vishay
BYG10J-E3/TR3 Vishay
BYG10J-E3/TR3 Rectifiers
BYG10J-E3/TR3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BYG10J-E3/TR3 Rectifiers across the USA, India, Europe, Australia, and various other global locations. BYG10J-E3/TR3 Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

Part No. BYG10J-E3/TR3
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers 1.5 Amp 600 Volt
Datasheet: BYG10J-E3/TR3 Datasheet (PDF)
Price (USD)
7500: USD 0.0518 ea
Line Total: USD 388.5 
Availability : 0
  
QtyUnit Price
7500$ 0.0518
15000$ 0.0503

Availability 0
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 7500
Multiples : 7500
QtyUnit Price
7500$ 0.1147


Availability 0
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 7500
Multiples : 7500
QtyUnit Price
7500$ 0.0518
15000$ 0.0503


Availability 0
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.56
10$ 0.3413
100$ 0.2124
500$ 0.1463
1000$ 0.1331
2500$ 0.121
5000$ 0.1034
7500$ 0.0935
22500$ 0.0935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BYG10J-E3/TR3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BYG10J-E3/TR3 and other electronic components in the Rectifiers category and beyond.

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BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES Low profile package Ideal for automated placement Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Meets MSL level 1, per J-STD-020, LF maximum peak DO-214AC (SMA) of 260 C AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in general purpose rectification of power supplies, I 1.5 A F(AV) inverters, converters, and freewheeling diodes for 200 V, 400 V, 600 V, 800 V, consumer, automotive, and telecommunication. V RRM 1000 V, 1600 V MECHANICAL DATA I 30 A FSM I 1.0 A Case: DO-214AC (SMA) R Molding compound meets UL 94 V-0 flammability rating V 1.15 V F Base P/N-E3 - RoHS-compliant, commercial grade E 20 mJ R Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified T max. 150 C J Terminals: Matte tin plated leads, solderable per J-STD-002 Package DO-214AC (SMA) and JESD 22-B102 Diode variations Single die E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note BYG10Y for commercial grade only Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y Maximum repetitive peak reverse voltage V 200 400 600 800 1000 1600 V RRM Average forward current I 1.5 A F(AV) Peak forward surge current 10 ms single half I 30 A FSM sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) E 20 mJ R I = 1 A, T = 25 C (for BYG10D thru BYG10M) (BR)R J I = 0.4 A, T = 25 C (for BYG10Y) (BR)R J Operating junction and storage temperature range T , T - 55 to + 150 C J STG Revision: 15-Jan-14 Document Number: 88957 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT Maximum I = 1 A 1.1 F instantaneous T = 25 C V V J F (1) I = 1.5 A 1.15 F forward voltage T = 25 C 1 J Maximum DC V = V I A R RRM R reverse current T = 100 C 10 J Maximum reverse I = 0.5 A, I = 1.0 A, F R t 4s rr recovery time I = 0.25 A rr Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT Typical thermal resistance, junction to lead R 25 C/W JL (1) R 150 JA (2) Typical thermal resistance, junction to ambient R 125 C/W JA (3) R 100 JA Notes (1) Mounted on epoxy-glass hard tissue (2) 2 Mounted on epoxy-glass hard tissue, 50 mm 35 m Cu (3) 2 Mounted on Al-oxide-ceramic (Al O ), 50 mm 35 m Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG10D-E3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYG10D-E3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYG10DHE3/TR 0.064 TR 1800 7 diameter plastic tape and reel (1) BYG10DHE3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 100 1.6 1.4 V = V R RRM Half Sine-Wave 10 1.2 R 25 K/W JA T = 150 C J 1.0 1 0.8 T = 25 C J 0.1 0.6 0.4 0.01 R 125 K/W JA 0.2 R 150 K/W JA 0.001 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 Forward Voltage (V) Ambient Temperature (C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Revision: 15-Jan-14 Document Number: 88957 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Forward Current (A) Average Forward Current (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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