IMBD4148 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES Silicon epitaxial planar diodes 3 Fast switching diode in case SOT-23, especially suited for automatic insertion. AEC-Q101 qualified Base P/N-E3 - RoHS-compliant, commercial grade 12 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS IMBD4148-E3-08 or IMBD4148-E3-18 IMBD4148 Single diode A2 Tape and reel IMBD4148-HE3-08 or IMBD4148-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Peak reverse voltage V 100 V RM Rectified current (average) half wave f 50 Hz I 150 mA (1) F(AV) rectification with resist. Surge forward current t < 1 s, T = 25 C I 500 mA j FSM (1) Power dissipation up to T = 25 C P 350 mW amb tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 450 C/W thJA Junction temperature T 150 C j Storage temperature range T - 65 to + 150 C stg Operating temperature range T - 55 to + 150 C op Note (1) Device on fiberglass substrate, see layout on next page. Rev. 1.6, 15-May-13 Document Number: 85731 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IMBD4148 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 10 mA V 1.0 V F F V = 70 V I 2500 nA R R Leakage current V = 70 V, Tj = 150 C I 50 A R R V = 25 V, Tj = 150 C I 30 A R R Diode capacitance V = V = 0 C 4pF F R D Reverse recovery time I = 10 mA to i = 1 mA, F R t 4ns rr (see figures) V = 6 V, R = 100 R L LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 T =25C j f=1kHz 100 T = 100C j 1000 10 25C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.01 0.1 110 100 I - Forward Current (mA) 18661 V - ForwardVoltage (V ) 18662 F F Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.6, 15-May-13 Document Number: 85731 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current ( mA) F r - Dynamic Forward Resistance() f