IRF510, SiHF510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 100 DS Available Repetitive avalanche rated R ( )V = 10 V 0.54 DS(on) GS 175 C operating temperature Available Q max. (nC) 8.3 g Fast switching Q (nC) 2.3 gs Ease of paralleling Q (nC) 3.8 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 Note TO-220AB * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION S Third generation power MOSFETs from Vishay provide the D G S designer with the best combination of fast switching, ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION INFORMATION Package TO-220AB IRF510PbF Lead (Pb)-free SiHF510-E3 IRF510 SnPb SiHF510 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 5.6 C Continuous Drain Current V at 10 V I GS D T = 100 C 4.0 A C a Pulsed Drain Current I 20 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 75 mJ AS a Repetitive Avalanche Current I 5.6 A AR a Repetitive Avalanche Energy E 4.3 mJ AR Maximum Power Dissipation T = 25 C P 43 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.8 mH, R = 25 , I = 5.6 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF510, SiHF510 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I =3.4 A - - 0.54 DS(on) GS D b Forward Transconductance g V = 50 V, I = 3.4 A 1.3 - - S fs DS D Dynamic Input Capacitance C V = 0 V, -180 - iss GS Output Capacitance C -81- oss V = 25 V, pF DS Reverse Transfer Capacitance C -15- rss f = 1.0 MHz, see fig. 5 Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V D DS Gate-Source Charge Q --V = 10 V V = 10 V, 2.3 nC gs GS DS b see fig. 6 and fig. 13 Gate-Drain Charge Q --3.8 gd Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A DD D ns b R = 24 , R = 8.4, see fig. 10 Turn-Off Delay Time t -1g D 5- d(off) Fall Time t -9.4- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 5.6 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 20 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 5.6 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.44 0.88 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-2693-Rev. C, 16-Nov-15 Document Number: 91015 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000