IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 250 DS Available Repetitive Avalanche Rated R ()V = 10 V 1.1 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 14 g COMPLIANT Ease of Paralleling Q (nC) 2.7 gs Simple Drive Requirements Q (nC) 7.8 gd Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF624PbF Lead (Pb)-free SiHF624-E3 IRF624 SnPb SiHF624 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 4.4 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.8 A C a Pulsed Drain Current I 14 DM Linear Derating Factor 0.40 W/C b Single Pulse Avalanche Energy E 100 mJ AS a Repetitive Avalanche Current I 4.4 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C P 50 W C D c Peak Diode Recovery dV/dt dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 8.3 mH, R = 25 , I = 4.4 A (see fig. 12). DD J g AS c. I 4.4 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91029 www.vishay.com S11-0509-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF624, SiHF624 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 250 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.36 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.6 A -- 1.1 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.6 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 260 - iss V = 0 V, GS Output Capacitance C -7V = 25 V, 7- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 14 g I = 4.4 A, V = 200 V, D DS Gate-Source Charge Q --V = 10 V 2.7 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.8 gd Turn-On Delay Time t -7.0 - d(on) Rise Time t -13 - r V = 125 V, I = 4.4 A, DD D ns b R = 18 , R = 28 , see fig. 10 Turn-Off Delay Time t -20- d(off) g D Fall Time t -12- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 4.4 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 14 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 4.4 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 200 400 ns rr b T = 25 C, I = 4.4 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.93 1.9 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91029 2 S11-0509-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000