IRF634 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available Fast switching Available Ease of paralleling G Simple drive requirements Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G S Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 250 DS Third generation power MOSFETs from Vishay provide the R ()V = 10 V 0.45 DS(on) GS designer with the best combination of fast switching, Q max. (nC) 41 g ruggedized device design, low on-resistance and Q (nC) 6.5 gs cost-effectiveness. Q (nC) 22 gd The TO-220AB package is universally preferred for all Configuration Single commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF634PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 8.1 C Continuous drain current V at 10 V I GS D T = 100 C 5.1 A C a Pulsed drain current I 32 DM Linear derating factor 0.59 W/C b Single pulse avalanche energy E 300 mJ AS a Repetitive avalanche current I 8.1 A AR a Repetitive avalanche energy E 7.4 mJ AR Maximum power dissipation T = 25 C P 74 W C D c Peak diode recovery dV/dt dV/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 7.3 mH, R = 25 , I = 8.1 A (see fig. 12) DD J g AS c. I 8.1 A, dI/dt 120 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF634 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.37 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 5.1 A - - 0.45 DS(on) GS D b Forward transconductance g V = 50 V, I = 5.1 A 1.6 - - S fs DS D Dynamic Input capacitance C -770 - iss V = 0 V, GS Output capacitance C -1V = 25 V, 90- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -52- rss Total gate charge Q -- 41 g I = 5.6 A, V = 200 V, D DS Gate-source charge Q --V = 10 V 6.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --22 gd Turn-on delay time t -9.6 - d(on) Rise time t -21 - r V = 125 V, I = 5.6 A, DD D ns b R = 12 , R = 22 , see fig. 10 g D Turn-off delay time t -42- d(off) Fall time t -19- f Gate input resistance R f = 1 MHz, open drain 0.6 - 2.9 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 8.1 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 32 SM S b Body diode voltage V T = 25 C, I = 8.1 A, V = 0 V -- 2.0 V SD J S GS Body diode reverse recovery time t - 220 440 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.2 2.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0340-Rev. C, 12-Apr-2021 Document Number: 91034 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000