IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 500 DS Available in tape and reel R ( )V = 10 V 3.0 DS(on) GS Available Dynamic dV/dt rating Q (Max.) (nC) 24 g Repetitive avalanche rated Q (nC) 3.3 gs Available Fast switching Q (nC) 13 gd Ease of paralleling Configuration Single Simple drive requirements D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 2 I PAK (TO-262) D PAK (TO-263) Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G G D S DESCRIPTION D S G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and cost-effectiveness. N-Channel MOSFET 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and halogen-free SiHF820S-GE3 SiHF820STRL-GE3 SiHF820STRR-GE3 SiHF820L-GE3 a a Lead (Pb)-free IRF820SPbF IRF820STRLPbF IRF820STRRPbF IRF820LPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 2.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 1.6 A C a Pulsed Drain Current I 8.0 DM Linear Derating Factor 0.40 W/C e Linear Derating Factor (PCB mount) 0.025 b Single Pulse Avalanche Energy E 210 mJ AS a Avalanche Current I 2.5 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C 50 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 60 mH, R = 25 , I = 2.5 A (see fig. 12). DD J g AS c. I 2.5 A, dI/dt 50 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-1659-Rev. D, 20-Jul-15 Document Number: 91060 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.5 A -- 3.0 DS(on) GS D b Forward Transconductance g V = 50 V, I = 1.5 A 1.5 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 2- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -37- rss Total Gate Charge Q -- 24 g I = 2.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --13 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -8.6 - r V = 250 V, I = 2.1 A, DD D ns b Turn-Off Delay Time t -33- d(off) R = 18 , R = 100 , see fig. 10 g D Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 2.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 8.0 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 2.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 260 520 ns rr b T = 25 C, I = 2.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.70 1.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-1659-Rev. D, 20-Jul-15 Document Number: 91060 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000