IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 500 DS Definition R (Max.) ( )V = 10 V 1.40 DS(on) GS Low Gate Charge Q Results in Simple Drive g Q (Max.) (nC) 24 g Requirement Q (nC) 6.3 gs Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 11 Ruggedness gd Fully Characterized Capacitance and Avalanche Voltage Configuration Single and Current Effective C specified D oss 2 2 Compliant to RoHS Directive 2002/95/EC I PAK D PAK (TO-263) (TO-262) APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptible Power Supply G D S High speed power switching D S G TYPICAL SMPS TOPOLOGIES S Two Transistor Forward N-Channel MOSFET Half Bridge and Full Bridge ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHF830AS-GE3 SiHF830ASTRL-GE3 SiHF830AL-GE3 a IRF830ASPbF IRF830ASTRLPbF IRF830ALPbF Lead (Pb)-free a SiHF830AS-E3 SiHF830ASTL-E3 SiHF830AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT 500 Drain-Source Voltage V DS V Gate-Source Voltage V 30 GS T = 25 C 5.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.2 A C a, e Pulsed Drain Current I 20 DM Linear Derating Factor 0.59 W/C b, e Single Pulse Avalanche Energy E 230 mJ AS a Avalanche Current I 5.0 A AR a Repetiitive Avalanche Energy E 7.4 mJ AR T = 25 C 3.1 A Maximum Power Dissipation P W D T = 25 C 74 C c, e Peak Diode Recovery dV/dt dV/dt 5.3 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 18 mH, R = 25 , I = 5.0 A (see fig. 12). J g AS c. I 5.0 A, dI/dt 370 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses SiHF830A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91062 www.vishay.com S11-1049-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 a thJA (PCB Mounted, Steady-State) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 500 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.60 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.0 A -- 1.4 DS(on) GS D d Forward Transconductance g V = 50 V, I = 3.0 A 2.8 - - S fs DS D Dynamic Input Capacitance C - 620 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 3- pF oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -4.3- rss V = 1.0 V, f = 1.0 MHz - 886 - DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 27 - GS DS c, d Effective Output Capacitance C eff. V = 0 V to 400 V -39 - oss DS Total Gate Charge Q -- 24 g I = 5.0 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 6.3 nC gs GS b, d see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -21 - r V = 250 V, I = 5.0 A, DD D ns b, d R = 14 , R = 49 , see fig. 10 g D Turn-Off Delay Time t -21- d(off) Fall Time t -15- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 5.0 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 20 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 5.0 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 430 650 ns rr b, d T = 25 C, I = 5.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.0 3.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V . oss oss DS DS d. Uses SiHF830A data and test conditions. www.vishay.com Document Number: 91062 2 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000