IRFBC40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available Fast switching Available Ease of paralleling G Simple drive requirements Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G S Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY V (V) 600 DS DESCRIPTION R ()V = 10 V 1.2 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 60 g designer with the best combination of fast switching, Q (nC) 8.3 ruggedized device design, low on-resistance and gs cost-effectiveness. Q (nC) 30 gd The TO-220AB package is universally preferred for all Configuration Single commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFBC40PbF Lead (Pb)-free and halogen-free IRFBC40PbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 20 GS T = 25 C 6.2 C Continuous drain current V at 10 V I GS D T = 100 C 3.9 A C a Pulsed drain current I 25 DM Linear derating factor 1.0 W/C b Single pulse avalanche energy E 570 mJ AS a Repetitive avalanche current I 6.2 A AR a Repetitive avalanche energy E 13 mJ AR Maximum power dissipation T = 25 C P 125 W C D c Peak diode recovery dV/dt dV/dt 3.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 27 mH, R = 25 , I = 6.2 A (see fig. 12) DD J g AS c. I 6.2 A, dI/dt 80 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0868-Rev. C, 16-Aug-2021 Document Number: 91115 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFBC40 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.7 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 100 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.7A -- 1.2 DS(on) GS D b Forward transconductance g V = 100 V, I = 3.7 A 4.7 - - S fs DS D Dynamic Input capacitance C - 1300 - iss V = 0 V, GS Output capacitance C V = 25 V, -160 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -30 - rss Total gate charge Q -- 60 g I = 6.2 A, V = 360 V, D DS Gate-source charge Q V = 10 V -- 8.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q -- 30 gd Turn-on delay time t -13 - d(on) Rise time t -18 - r V = 300 V, I = 6.2 A, DD D ns b R = 9.1 , R = 47 , see fig. 10 Turn-off delay time t g D -55 - d(off) Fall time t -20 - f Gate input resistance R f = 1 MHz, open drain 0.3 - 3.9 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 6.2 S showing the A integral reverse G a Pulsed diode forward current I -- 25 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 6.2 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 450 940 ns rr b T = 25 C, I = 6.2 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.8 7.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0868-Rev. C, 16-Aug-2021 Document Number: 91115 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000