X-On Electronics has gained recognition as a prominent supplier of IRFBC40APBF mosfet across the USA, India, Europe, Australia, and various other global locations. IRFBC40APBF mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

IRFBC40APBF Vishay

Hot IRFBC40APBF electronic component of Vishay
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See Product Specifications
Part No.IRFBC40APBF
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET N-Chan 600V 6.2 Amp
Datasheet: IRFBC40APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 0.8843 ea
Line Total: USD 6.19

Availability - 388
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
84 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6749
10 : USD 1.4015
30 : USD 1.2511
100 : USD 1.0797
500 : USD 1.0046
1000 : USD 0.9712

1228 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.932
10 : USD 1.4375
100 : USD 1.196
250 : USD 1.1615
1000 : USD 1.15
10000 : USD 1.1259

388 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 7
Multiples : 1
7 : USD 0.8843

2322 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 9
Multiples : 1
9 : USD 1.3597
10 : USD 1.268
25 : USD 1.2614
50 : USD 1.2289
100 : USD 1.1145
500 : USD 1.0335

     
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We are delighted to provide the IRFBC40APBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBC40APBF and other electronic components in the MOSFET category and beyond.

IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Q results in simple drive g V (V) 600 DS Requirement Available R ( )V = 10 V 1.2 DS(on) GS Improved gate, avalanche and dynamic dV/dt Q max. (nC) 42 g Available ruggedness Q (nC) 10 gs Fully characterized capacitance and avalanche voltage Q (nC) 20 gd and current Configuration Single Effective C specified oss D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-220AB Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For G example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. S APPLICATIONS S D G Switch mode power supply (SMPS) N-Channel MOSFET Uninterruptible power supply High speed power switching TYPICAL SMPS TOPOLOGIES Single transistor forward ORDERING INFORMATION Package TO-220AB IRFBC40APbF Lead (Pb)-free SiHFBC40A-E3 IRFBC40A SnPb SiHFBC40A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 6.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.9 A C a Pulsed Drain Current I 25 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 570 mJ AS a Repetitive Avalanche Current I 6.2 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 6.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 29.6 mH, R = 25 , I = 6.2 A (see fig. 12). J g AS c. I 6.2 A, dI/dt 80 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91112 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFBC40A, SiHFBC40A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.66 - V/C DS J DS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.7 A -- 1.2 DS(on) GS D Forward Transconductance g V = 50 V, I = 3.7 A 3.4 - - S fs DS D Dynamic Input Capacitance C - 1036 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 136- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.0- rss pF V = 1.0 V, f = 1.0 MHz - 1487 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 36 - GS DS c Effective Output Capacitance C eff. V = 0 V to 480 V -48 - oss DS Total Gate Charge Q -- 42 g I = 6.2 A, V = 480 V D DS Gate-Source Charge Q --V = 10 V 10 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --20 gd Turn-On Delay Time t -13 - d(on) Rise Time t V = 300 V, I = 6.2 A -23 - r DD D ns R = 9.1 , R = 47 g D Turn-Off Delay Time t -31- d(off) b see fig. 10 Fall Time t -18- f Gate Input Resistance R f = 1 MHz, open drain 0.6 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6.2 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 25 SM S b Body Diode Voltage V T = 25 C, I = 6.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 431 647 ns rr b T = 25 C, I = 6.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS S16-0763-Rev. D, 02-May-16 Document Number: 91112 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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