IRFBE30PBF Vishay

IRFBE30PBF electronic component of Vishay
IRFBE30PBF Vishay
IRFBE30PBF MOSFETs
IRFBE30PBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRFBE30PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFBE30PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRFBE30PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet: IRFBE30PBF Datasheet (PDF)
Price (USD)
1: USD 2.1064 ea
Line Total: USD 2.11 
Availability : 0
  
QtyUnit Price
1$ 2.1064
10$ 1.7736
50$ 0.9705
100$ 0.8311
500$ 0.7691
1000$ 0.74

Availability 9011
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 300
Multiples : 1
QtyUnit Price
300$ 0.9035
1000$ 0.8438
3000$ 0.8


Availability 1455
Ship by Tue. 23 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.075
10$ 1.464
100$ 1.331
1000$ 1.0846
2000$ 1.0549


Availability 718
Ship by Tue. 23 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.436
10$ 2.184
17$ 1.19
45$ 1.134


Availability 326
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 177
Multiples : 1
QtyUnit Price
177$ 1.5174
225$ 1.1945


Availability 415
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 170
Multiples : 1
QtyUnit Price
170$ 1.5855
217$ 1.2362


Availability 5674
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 150
Multiples : 50
QtyUnit Price
150$ 1.8166


Availability 361
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 134
Multiples : 1
QtyUnit Price
134$ 2.0126
200$ 1.3439

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRFBE30PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFBE30PBF and other electronic components in the MOSFETs category and beyond.

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The Vishay IRFBE30PBF is an N-Channel MOSFET transistor designed for use in high-speed switching applications. It is manufactured using advanced PowerMOS technology, which offers enhanced performance and reliability over other types of MOSFETs. It features low on-resistance values, a low input capacitance and a wide drain-source breakdown voltage. This MOSFET is capable of switching frequencies up to 100 kHz and is available in both a through-hole and a surface-mount package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Vishay / MCB Industrie
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