IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 800 DS Definition R ( )V = 10 V 3.0 DS(on) GS Dynamic dV/dt Rating Q (Max.) (nC) 78 g Repetitive Avalanche Rated Q (nC) 9.6 gs Fast Switching Q (nC) 45 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC 2 2 D PAK I PAK (TO-262) (TO-263) DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and G D S cost-effectiveness. D S G S N-Channel MOSFET ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a Lead (Pb)-free and Halogen-free SiHFBE30S-GE3 SiHFBE30STRL-GE3 SiHFBE30L-GE3 a IRFBE30SPbF IRFBE30STRLPbF IRFBE30LPbF Lead (Pb)-free a SiHFBE30S-E3 SiHFBE30STL-E3 SiHFBE30L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 800 DS V Gate-Source Voltage V 20 GS T = 25 C 4.1 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.6 A C a Pulsed Drain Current I 16 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 260 mJ AS a Avalanche Current I 4.1 A AR a Repetitive Avalanche Energy E 13 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 2.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 29 mH, R = 25 , I = 4.1 A (see fig. 12). DD J g AS c. I 4.1 A, dI/dt 100 A/s, V 600 V, T 150 C. SD DD J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91119 www.vishay.com S11-1053-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R -- 62 thJA Case-to-Sink, Flat, Greased Surface R -0.50- C/W thCS Maximum Junction-to-Case (Drain) R -- 1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 800 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.90 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 800 V, V = 0 V - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = 640 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.5 A -- 3.0 DS(on) GS D Forward Transconductance g V = 100 V, I = 2.5 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 1300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 310- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -190- rss Total Gate Charge Q -- 78 g I = 4.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 9.6 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --45 gd Turn-On Delay Time t -12 - d(on) Rise Time t -33 - r V = 400 V, I = 4.1 A, DD D ns b R = 12 , R = 95 , see fig. 10 g D Turn-Off Delay Time t -82- d(off) Fall Time t -30- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 4.1 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 16 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 4.1 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 480 720 ns rr b T = 25 C, I = 4.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.7 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91119 2 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000