IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount (IRFBF20S, SiHFBF20S) 2 2 I PAK (TO-262) D PAK (TO-263) Low-profile through-hole (IRFBF20L, SiHFBF20L) Available in tape and reel (IRFBF20S, SiHFBF20S) Available Dynamic dV/dt rating 150 C operating temperature G G Fast switching Available D S Fully avalanche rated D S G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S Note * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs form Vishay provide the V (V) 900 DS designer with the best combination of fast switching, R ( )V = 10 V 8.0 DS(on) GS ruggedized device design, low on-resistance and cost-effectiveness. Q max. (nC) 38 g 2 The D PAK is a surface-mount power package capable of Q (nC) 4.7 gs the accommodating die sizes up to HEX-4. It provides th e Q (nC) 21 gd highest power capability and the lowest possible Configuration Single on-resistance in any existing surface-mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. Th e through-hole version (IRFBF20L, SiHFBF20L) is available for low-profile applications. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHFBF20S-GE3 SiHFBF20STRL-GE3 SiHFBF20STRR-GE3 SiHFBF20L-GE3 a a Lead (Pb)-free IRFBF20SPbF IRFBF20STRLPbF IRFBF20STRRPbF IRFBF20LPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT e Drain-source voltage V 900 DS V e Gate-source voltage V 20 GS T = 25 C 1.7 C Continuous drain current V at 10 V I GS D T = 100 C 1.1 A C a, e Pulsed drain current I 6.8 DM Linear derating factor 0.43 W/C b, e Single pulse avalanche energy E 180 mJ AS a Repetitive avalanche current I 1.7 A AR a Repetitive avalanche energy E 5.4 mJ AR T = 25 C 54 C Maximum power dissipation P W D T = 25 C 3.1 A c, e Peak diode recovery dV/dt dV/dt 1.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Mounting torque 6-32 or M3 screw 10 N Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V starting T = 25 C, L = 117 mH, R = 25 , I = 1.7 A (see fig. 12) DD J g AS c. I 1.7 A, dI/dt 70 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. Uses IRFBF20, SiHFBF20 data and test conditions S20-0238-Rev. C, 13-Apr-2020 Document Number: 91121 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient (PCB R -40 thJA a mounted, steady-state) C/W Maximum junction-to-case R -2.3 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 900 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 1.1 - mV/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 900 V, V = 0 V - - 100 DS GS Zero gate voltage drain current I A DSS V = 720 V, V = 0 V, T = 125 C - - 500 DS GS J b Drain-source on-state resistance R V = 10 V I = 1.0 A -- 8.0 DS(on) GS D b Forward transconductance g V = 50 V, I = 1.0 A 0.6 - - S fs DS D Dynamic Input capacitance C - 490 - iss V = 0 V, GS Output capacitance C -5V = 25 V, 5- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Total gate charge Q -- 38 g I = 1.7 A, V = 360 V, D DS Gate-source charge Q --V = 10 V 4.7 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --21 gd Turn-on delay time t -8.0 - d(on) Rise time t -21 - r V = 450 V, I = 1.7 A, DD D ns b R = 18 , V = 10 V, see fig. 10 g GS Turn-off delay time t -56- d(off) Fall time t -32- f Gate input resistance R f = 1 MHz, open drain 0.6 - 3.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 1.7 S showing the A integral reverse G a Pulsed diode forward current I p - n junction diode -- 6.8 SM S b Body diode voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 350 530 ns rr b T = 25 C, I = 1.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.85 1.3 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. Uses IRFBF20/SiHFBF20 data and test conditions S20-0238-Rev. C, 13-Apr-2020 Document Number: 91121 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000