Product Information

PMZB290UN,315

PMZB290UN,315 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 20V Single N-channel Trench MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000

Stock Image

PMZB290UN,315
Nexperia

10000 : USD 0.0989
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

PMZB290UN,315
Nexperia

1 : USD 0.6552
10 : USD 0.4775
100 : USD 0.2701
500 : USD 0.1789
1000 : USD 0.1372
2000 : USD 0.1193
5000 : USD 0.1074
N/A

Obsolete
0 - WHS 3


Multiples : 10000

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PMZB290UN,315
Nexperia

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

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PMZB290UN,315
Nexperia

1 : USD 0.9062
10 : USD 0.6835
100 : USD 0.1554
500 : USD 0.1025
1000 : USD 0.0787
2500 : USD 0.0621
10000 : USD 0.0539
20000 : USD 0.0518
N/A

Obsolete
0 - WHS 5

MOQ : 209
Multiples : 1

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PMZB290UN,315
Nexperia

209 : USD 0.3594
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMZB290UN 20 V, single N-channel Trench MOSFET 20 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height ElectroStatic Discharge (ESD) protection: 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 1 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 200 mA T = 25 C - 290 350 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZB290UN 20 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 3 D drain G Transparent top view DFN1006B-3 (SOT883B) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMZB290UN DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 SOT883B solder lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMZB290UN 0000 0101 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description PMZB290UN All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 20 January 2016 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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