IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Logic-level gate drive G D R specified at V = 4 V and 5 V DS(on) GS Available Fast switching S Ease of paralleling D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Marking code: LA Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. V (V) 60 DS The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. R ( )V = 5.0 V 0.20 DS(on) GS Its unique package design allows for easy automatic Q max. (nC) 8.4 g pick-and-place as with other SOT or SOIC packages bu t Q (nC) 3.5 has the added advantage of improved thermal performance gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 6.0 gd greater than 1.25 W is possible in a typical surface moun t Configuration Single application. ORDERING INFORMATION Package SOT-223 SiHLL014TR-GE3 Lead (Pb)-free and halogen-free a, b IRLL014TRPbF-BE3 a Lead (Pb)-free IRLL014TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 2.7 C Continuous drain current V at 10 V I GS D T = 100 C 1.7 A C a Pulsed drain current I 22 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 100 mJ AS a Avalanche current I 2.7 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 16 mH, R = 25 , I = 2.7 A (see fig. 12) DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0322-Rev. G, 05-Apr-2021 Document Number: 91319 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLL014, SiHLL014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.073 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 1.6 A - - 0.20 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 1.4 A - - 0.28 GS D Forward transconductance g V = 25 V, I = 1.6 A 3.2 - - S fs DS D Dynamic Input capacitance C - 400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -42- rss Total gate charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 5.0 V 3.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --6.0 gd Turn-on delay time t -9.3 - d(on) Rise time t - 110 - r V = 30 V, I = 10 A, DD D ns b R = 12 , R = 2.8 , see fig. 10 Turn-off delay time t -1g D 7- d(off) Fall time t -26- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 2.7 S showing the A integral reverse G a Pulsed diode forward current I -- 22 p - n junction diode SM S b Body diode voltage V T = 25 C, I = 2.7 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 65 130 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.65 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0322-Rev. G, 05-Apr-2021 Document Number: 91319 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000