IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 60 DS Definition R ( )V = 5.0 V 0.20 Dynamic dV/dt Rating DS(on) GS Surface Mount (IRLR014, SiHLR014) Q (Max.) (nC) 8.4 g Straight Lead (IRLU014, SiHLU014) Q (nC) 3.5 gs Available in Tape and Reel Q (nC) 6.0 gd Logic-Level Gate Drive Configuration Single R Specified at V = 4 V and 5 V DS(on) GS D Fast Switching Compliant to RoHS Directive 2002/95/EC DPAK IPAK (TO-252) (TO-251) DESCRIPTION D Third generation Power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S S G D The DPAK is designed for surface mounting using vapor G S phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR014-GE3 - SiHLR014TRL-GE3 SiHLU014-GE3 a a IRLR014PbF IRLR014TRPbF IRLR014TRLPbF IRLU014PbF Lead (Pb)-free a a SiHLR014-E3 SiHLR014T-E3 SiHLR014TL-E3 SiHLU014-E3 a a IRLR014 IRLR014TR IRLR014TRL IRLU014 SnPb a a SiHLR014 SiHLR014T SiHLR014TL SiHLU014 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 7.7 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 4.9 A C a Pulsed Drain Current I 31 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 27.4 mJ AS Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 924 H, R = 25 , I = 7.7 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91321 www.vishay.com S10-1139-Rev. C, 17-May-10 1IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.073 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = - 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 4.6 A - - 0.20 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 3.9 A - - 0.28 GS D Forward Transconductance g V = 25 V, I = 4.6 A 3.4 - - S fs DS D Dynamic Input Capacitance C - 400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -42- rss Total Gate Charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-Source Charge Q --V = 5.0 V 3.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --6.0 gd Turn-On Delay Time t -9.3 - d(on) Rise Time t - 110 - r V = 30 V, I = 10 A, DD D ns b R = 12 , R = 2.8 , see fig. 10 g D Turn-Off Delay Time t -17- d(off) Fall Time t -26- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - c S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7.7 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 31 SM S b Body Diode Voltage V T = 25 C, I = 7.7 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 65 130 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.33 0.65 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91321 2 S10-1139-Rev. C, 17-May-10