MBR60100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier FEATURES Power pack TO-220AB Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 260 C, 40 s Material categorization: for definitions of compliance 3 2 1 please see www.vishay.com/doc 99912 PIN 1 PIN 2 TYPICAL APPLICATIONS CASE PIN 3 For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2 x 30 A F(AV) Case: TO-220AB V 100 V RRM Epoxy meets UL 94 V-0 flammability rating I 350 A FSM Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 V at I = 30 A 0.64 V F F E3 suffix for consumer grade, meets JESD 201 class 1A T max. 175 C J whisker test Package TO-220AB Polarity: As marked Diode variations Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR60100CT UNIT Maximum repetitive peak reverse voltage V 100 V RRM Working peak reverse voltage V 100 V RWM Maximum DC blocking voltage V 100 V DC total device 60 Maximum average forward rectified current I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed I 350 A FSM on rated load per diode Peak repetitive reverse current per diode at t = 2 s, 1 kHz I 1.0 A p RRM Peak non-repetitive reverse surge energy per diode (8/20 s waveform) E 25 mJ RSM Non-repetitive avalanche energy per diode at 25 C, I = 1.0 A, L = 40 mH E 20 mJ AS AS Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 17-Aug-15 Document Number: 88892 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR60100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 30 A 0.78 0.82 F T = 25 C J I = 60 A 0.92 1 F (1) Instantaneous forward voltage per diode V V F I = 30 A 0.64 0.69 F T = 125 C J I = 60 A 0.78 0.83 F T = 25 C 8 100 A J (2) Reverse current per diode V = 100 V I R R T = 125 C 8.5 20 mA J Notes (1) Pulse test: 300s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR60100CTUNIT Typical thermal resistance per diode R 0.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR60100CT-E3/45 2.068 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) C 70 400 60 300 50 40 200 30 20 100 10 0 0 10 100 0 25 50 100 125 150 175 1 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 17-Aug-15 Document Number: 88892 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Forward Current (A)