MBRA120TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Cathode Anode Guard ring for enhanced ruggedness and long term reliability SMA Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level PRODUCT SUMMARY DESCRIPTION I 1.0 A The MBRA120TRPbF surface mount Schottky rectifier has F(AV) been designed for applications requiring low forward drop V 20 V R and very small foot prints on PC boards. Typical applications I 20 mA at 125 C RM are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 20 V RRM I t = 5 s sine 310 A FSM p V 1.0 Apk, T = 125 C 0.34 V F J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL MBRA120TRPbFUNITS Maximum DC reverse voltage V R 20 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 136 C, rectangular waveform 1.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 310 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 40 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94300 For technical questions, contact: diodestech vishay.com www.vishay.com Revision: 02-Jul-09 1 MBRA120TRPbF Schottky Rectifier, 1.0 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 1 A 0.42 0.45 T = 25 C J 2 A 0.46 0.52 1 A 0.33 0.37 (1) Maximum forward voltage drop V T = 100 C V FM J 2 A 0.39 0.45 1 A 0.30 0.35 T = 125 C J 2 A 0.36 0.43 T = 25 C 0.015 0.2 J (1) Maximum reverse leakage current I T = 100 C V = Rated V 2.0 6.0 mA RM J R R T = 125 C 7.0 20 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 110 - pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 - nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T - 65 to 150 C J Stg temperature range Maximum thermal resistance, (2) R DC operation 35 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Device marking Case style SMA (similar D-64) V12A Notes dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions, contact: diodestech vishay.com Document Number: 94300 2 Revision: 02-Jul-09