Product Information

MGDT100125

MGDT100125 electronic component of Vishay

Datasheet
Pulse Transformers PLANAR 1:1.25:1.25 High Side / 1200V

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.4545 ea
Line Total: USD 12.45

93 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
93 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

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MGDT100125
Vishay

1 : USD 12.4545
10 : USD 9.568
25 : USD 8.97
50 : USD 8.694
100 : USD 8.51
250 : USD 8.372
500 : USD 8.372
1000 : USD 8.372
2500 : USD 8.372

     
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RoHS - XON
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Inductance
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VISHAY INTERTECHNOLOGY, INC. CUSTOM MAGNETICS MGDT Miniaturized Gate Drive Transformers KEY BENEFITS Miniaturized footprint is 40 % smaller than competitors Prolfi e is 33 % lower, less than 12 mm tall Smallest SMD package to meet 8 mm creepage and clearance distance APPLICATIONS Isolated half-bridge, full bridge, and dual active forward AC/DC and DC/DC power converters for high power applications with multiple FETs RESOURCES Datasheet: MGDT - www.vishay.com/doc 34454 For technical questions contact magnetics vishay.com Material categorization: for definitions please see www.vishay.com/doc 99912 Available Pro DuCT Sh EET 1/2 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED. PT0524-1801 ThIS DoCuMENT IS SuBJECT To ChANGE WIThouT NoTICE. ThE ProDuCTS DESCrIBED hErEIN AND ThIS DoCuMENT ArE SuBJECT To SPECIFIC DISCLAIMErS, SET For Th AT www.vishay.com/doc 91000 www.vishay.comVISHAY INTERTECHNOLOGY, INC. CUSTOM MAGNETICS MGDT Series www.vishay.com MGDT Vishay Custom Magnetics MGDT Series Miniaturized Gate Drive Transformers www.vishay.com Vishay Custom Magnetics FEATURES Miniaturized Gate Drive Transformers Available Deliver MOSFET / IGBT gate power and timing Miniaturized Gate Drive Transformers signals simultaneously Directly drive high side MOSFETs / IGBTs on busses up FEATURES to 1200 V Available Deliver MOSFET / IGBT gate power and timing Excellent rise time, overshoot, and peak current signals simultaneously characteristics Directly drive high side MOSFETs / IGBTs on busses up 8 mm minimum creepage and clearance from drive to to 1200 V gates Excellent rise time, overshoot, and peak current Low profile planar package characteristics LF and SM versions are RoHS-compliant 8 mm minimum creepage and clearance from drive to Material categorization: for definitions of compliance gates please see www.vishay.com/doc 99912 Low profile planar package ABSOLUTE MAXIMUM RATINGS Note * This datasheet provides information about parts that are PARAMETER CONDITIONS LIMITS UNITS LF and SM versions are RoHS-compliant RoHS-compliant and / or parts that are non RoHS-compliant. For Drive to gate, Material categorization: for definitions of compliance example, parts with lead (Pb) terminations are not RoHS-compliant. 3750 V AC Dielectric 1 min Please see the information / tables in this datasheet for details please see www.vishay.com/doc 99912 withstand Gate to gate, voltage ABSOLUTE MAXIMUM RATINGS 2500 V Note AC 1 min * This datasheet provides information about parts that are PARAMETER CONDITIONS LIMITS UNITS Total power RoHS-compliant and / or parts that are non RoHS-compliant. For T = 25 C 2.0 W A (1) Drive to gate, dissipation example, parts with lead (Pb) terminations are not RoHS-compliant. 3750 V AC Dielectric 1 min Please see the information / tables in this datasheet for details Operating withstand Continuous -55 to +125 C (2) Gate to gate, temperature voltage 2500 V AC 1 min Storage Continuous -55 to +130 C Total power temperature T = 25 C 2.0 W A (1) dissipation Frequency 100 to 500 kHz Operating Size Continuous -55 to +125 C (2) 20.57 x 18.42 x 11.43 mm temperature (L x W x H) Storage Terminals Through-hole and surface-mount Continuous -55 to +130 C temperature Note Frequency 100 to 500 kHz (1) Derate at 33.3 mW/C above 25 C Size (2) Derate drive level to 60 V/s above 85C 20.57 x 18.42 x 11.43 mm (L x W x H) Terminals Through-hole and surface-mount STANDARD ELECTRICAL SPECIFICATIONS Note (1) DC INTERWINDING Derate at 33.3 mW/C above 25 C (2) (2) RESISTANCE CAPACITANCE Derate drive level to 60 V/s above 85C USEFUL DRIVE MAGNETIZING LEAKAGE TRANSFER DRIVE GATE FREQ. EXCITATION INDUCTANCE INDUCTANCE PART NUMBER RATIO DRIVE GATES TO TO RANGE MAX. MIN. MAX. (1) ( 3 %) MAX. MAX. GATE GATE (2)(3) (4) STANDARD ELEC(kTRICAL SPEHz) CIFICAT (VsIONS) (H) (H) () () MAX. MAX. DC INTERWINDING (pF) (pF) (2) RESISTANCE CAPACITANCE MGDT100100 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 USEFUL DRIVE MAGNETIZING LEAKAGE TRANSFER DRIVE GATE FREQ. EXCITATION INDUCTANCE INDUCTANCE MGDT100100LF 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 PART NUMBER RATIO DRIVE GATES TO TO RANGE MAX. MIN. MAX. (1) ( 3 %) MGDT100100-SM 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 (2)(3) (4) MAX. MAX. GATE GATE (kHz) (Vs) (H) (H) () () MAX. MAX. MGDT100 125 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 (pF) (pF) MGDT100 125LF 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 MGDT100100 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 MGDT100 125-SM 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 MGDT100100LF 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 Notes MGDT100100-SM 100 to 500 1 : 1 : 1 80 240 0.5 0.35 0.35 15 10 (1) Drive : gate : gate MGDT100 125 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 (2) T = 25 C A (3) MGDT100 125LF 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 100 mV at 100 kHz across the drive winding with all gates open (4) 100 mA at 100 kHz into the drive winding with all gates shorted MGDT100 125-SM 100 to 500 1 : 1.25 : 1.25 80 240 0.5 0.35 0.50 25 10 Notes Pro(1)DuCT Sh EET 2/2 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED. Revision: 05-Jan-18Drive : gate : gate Document Number: 34454 1 (2) T = 25 C For technical questions, contact: magnetics vishay.com A PT0524-1801 ThIS DoCuMENT IS SuBJECT To ChANGE WIThouT NoTICE. ThE ProDuCTS DESCrIBED hErEIN AND (3) 100 mV at 100 kHz across the drive winding with all gates open THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ThIS DoCuMENT ArE SuBJECT To SPECIFIC DISCLAIMErS, SET For Th AT www.vishay.com/doc 91000 www.vishay.com (4) 100 mA at 100 kHz into the drive ARE SUBJEwinding withCT TO SPEC all gates shortedIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Revision: 05-Jan-18 Document Number: 34454 1 For technical questions, contact: magnetics vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 revision 05-Jan-18

Tariff Desc

8504.31.00 TRANSFORMERS, RF pulse, dual in-line packaging (DIP), Op. 05.10.1992 Dec. 08.01.1993 - TC 9209172
BC
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BEYSCHLAG
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