MI2050C, MI2060C www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES Power pack Guardring for overvoltage protection TO-262AA Lower power losses, high efficiency K Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 3 Material categorization: For definitions of compliance 2 1 please see www.vishay.com/doc 99912 MI20xxC PIN 1 PIN 2 TYPICAL APPLICATIONS CASE PIN 3 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, OR-ing diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-262AA I 2 x 10 A F(AV) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade V 50 V, 60 V RRM Terminals: Matte tin plated leads, solderable per I 150 A FSM J-STD-002 and JESD 22-B102 V at I = 10 A 0.570 V F F E3 suffix meets JESD 201 class 1A whisker test T max. 150 C J Polarity: As marked Package TO-262AA Mounting Torque: 10 in-lbs maximum Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MI2050C MI2060C UNIT Maximum repetitive peak reverse voltage V 50 60 V RRM total device 20 Maximum average forward rectified current (fig.1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Peak repetitive reverse current per leg at t = 2 s, 1 kHz per diode I 0.5 A p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T - 65 to +150 C J Storage temperature range T - 65 to +175 C STG Revision: 13-Aug-13 Document Number: 89007 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MI2050C, MI2060C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT I = 5 A T = 25 C 0.554 - F J I = 10 A T = 125 C 0.649 0.74 F J Maximum instantaneous forward voltage (1) V V F per diode I = 5 A T = 25 C 0.484 - F J I = 10 A T = 125 C 0.570 0.62 F J T = 25 C 15 150 A J (2) Reverse current per diode I rated V R R T = 100 C 10.8 25 mA J Typical junction capacitance C 4.0 V, 1 MHz 300 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MI2050C MI2060C UNIT Typical thermal resistance per diode R 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-262AA MI2060C-E3/4W 1.456 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 20 160 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 140 16 120 12 100 8 80 4 60 40 0 0 50 100 150 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge pCurrent Per Diode Revision: 13-Aug-13 Document Number: 89007 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)