Product Information

MMBZ27VDA-HE3-18

MMBZ27VDA-HE3-18 electronic component of Vishay

Datasheet
Zener Diodes 27 Volt 40 Watt Common Anode AUTO

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6557 ea
Line Total: USD 0.66

10791 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10762 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.4485
10 : USD 0.3461
100 : USD 0.2082
500 : USD 0.1932
1000 : USD 0.1311
2500 : USD 0.1208
10000 : USD 0.1173
50000 : USD 0.1104

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Test Current
Qualification
Series
Ir - Maximum Reverse Leakage Current
Hts Code
LoadingGif

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333 3 MMBZ27VDA www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES Available Dual silicon planar Zener diodes with common 3 anode configurations Dual package provides for bidirectional or separate unidirectional configurations The dual configurations protect two separate 12 lines with only one device Peak power: 40 W at 1 ms (bidirectional) For bidirectional operation, circuit connected to LINKS TO ADDITIONAL RESOURCES pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3 3D Models AEC-Q101 qualified available ESD capability according to AEC-Q101: PRIMARY CHARACTERISTICS human body model > 8 kV machine model > 800 V PARAMETER VALUE UNIT V range nom. 27 V Base P/N-E3 - RoHS-compliant, commercial grade Z Test current I 1mA ZT Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified V 27 V BR Material categorization: for definitions of compliance V 22 V WM please see www.vishay.com/doc 99912 P 40 W PPM T max. 150 C J V specification Pulse current Z Circuit configuration Common anode Polarity Uni-directional, bi-directional ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY MMBZ27VDA-E3-08 3000 (8 mm tape on 7 reel) 15 000 MMBZ27VDA-HE3-08 MMBZ27VDA MMBZ27VDA-E3-18 10 000 (8 mm tape on 13 reel) 10 000 MMBZ27VDA-HE3-18 PACKAGE MOLDING COMPOUND PACKAGE NAME WEIGHT MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS FLAMMABILITY RATING SOT-23 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Peak power dissipation P 40 W PK 225 mW T = 25 C, (2) amb Power dissipation on FR-5 board P tot derate above 25 C 1.8 mW/K 300 mW T = 25 C, (3) amb Power dissipation on alumina substrate P tot derate above 25 C 2.4 mW/K Thermal resistance junction to ambient air R 556 K/W thJA Operating temperature range T -55 to +150 C op Storage temperature range T , T -55 to +150 C j stg Notes (1) Non repetitive current pulse per figure 2 and derate above T = 25 C per figure 3 amb (2) FR-5 = 1 x 0.75 x 0.62 (3) Alumina = 0.4 x 0.3 x 0.024 , 99.5 % alumina Rev. 1.8. 30-Oct-2020 Document Number: 81294 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MMBZ27VDA www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb MAX. WORKING MAX. MAX. REVERSE MAX. MAX. ZENER VOLTAGE TEST PEAK REVERSE REVERSE VOLTAGE TEMPERATURE FORWARD (1) RANGE CURRENT REVERSE LEAKAGE SURGE (CLAMPING COEFFICIENT VOLTAGE VOLTAGE CURRENT CURRENT MARKING (2) VOLTAGE) PART NUMBER CODE V at I I V I at V I V at I V V at I Z ZT1 ZT1 RWM R RWM PP C RSM Z F F V mA V nA A VmV/C V mA MIN. NOM. MAX. MMBZ27VDA TA7 25.65 27 28.35 1 22 80 1 38 30 1.1 200 Notes (1) V measured at pulse test current I at an ambient temperature of 25 C Z ZT1 (2) Surge current waveform per figure 2 and derate per figure 3 TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 300 100 250 Alumina substrate 75 200 50 150 FR-5 board 100 25 50 0 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200 T, 18655 Temperature (C) 18657 T - Ambient Temperature (C) A Fig. 1 - Steady State Power Derating Curve Fig. 3 - Pulse Derating Curve Pulse width (t ) is defined as that p point where the peak current t r decays to 50 % of I t 10 s RSM r Peak value - I RSM 100 I RSM Half value - 2 50 t p 0 0 1 2 3 4 5 18656 t - Time (ms) Fig. 2 - Pulse Waveform Rev. 1.8. 30-Oct-2020 Document Number: 81294 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Value (%) P , Power Dissipation (mW) tot Peak pulse derating in % of peak power or current at T = 25 C (C) A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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DALE
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