Si1070X Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.099 at V = 4.5 V GS 1.2 TrenchFET Power MOSFET 30 3.5 0.140 at V = 2.5 V 1.0 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code 5 D 2 D U XX Lot Traceability G 3 4 S and Date Code Part Code Top View Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 12 GS b, c T = 25 C A 1.2 a I Continuous Drain Current (T = 150 C) D J b, c T = 70 C A 1 A I 6 Pulsed Drain Current DM I Avalanche Current 9 AS L = 0.1 mH Repetitive Avalanche Energy E 4.01 mJ AS b, c T = 25 C I Continuous Source-Drain Diode Current A A S 0.2 b, c T = 25 C A 0.236 a P W Maximum Power Dissipation D b, c T = 70 C 0.151 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 b, d R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 C/W. Document Number: 73893 www.vishay.com S10-2542-Rev. D, 08-Nov-10 1 Y Y Si1070X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 24.5 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.81 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.7 1.55 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1nA DS GS I Zero Gate Voltage Drain Current DSS V = 30 V, V = 0 V, T = 85 C 10 A DS GS J a I V = 5 V, V = 4.5 V 6 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 1.2 A 0.082 0.099 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 1.0 A 0.116 0.140 GS D Forward Transconductance g V = 15 V, I = 1.2 A 5S fs DS D b Dynamic C Input Capacitance 385 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 55 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = 15 V, V = 5 V, I = 1.2 A 3.8 8.3 DS GS D Q Total Gate Charge g 3.5 4.1 nC Q V = 15 V, V = 4.5 V, I = 4.6 A Gate-Source Charge 1.1 gs DS GS D Gate-Drain Charge Q 0.98 gd R Gate Resistance f = 1 MHz 4.7 6.2 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 22 33 r DD L ns I 1.0 A, V = 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 14 21 d(off) Fall Time t 69 f Drain-Source Body Diode Characteristics a I 6A Pulse Diode Forward Current SM V I = 1.2 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 19.4 29.5 nC rr Body Diode Reverse Recovery Charge Q 18.43 27.5 rr I = 3.8 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 16.4 ns a t 3 Reverse Recovery Rise Time b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73893 2 S10-2542-Rev. D, 08-Nov-10