Product Information

SI1403BDL-T1-GE3

SI1403BDL-T1-GE3 electronic component of Vishay

Datasheet
MOSFET -20V Vds 12V Vgs SC-70

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8316 ea
Line Total: USD 0.83

6276 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3032 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.575
10 : USD 0.4956
100 : USD 0.345
500 : USD 0.2691
1000 : USD 0.2185
3000 : USD 0.1874

     
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RoHS - XON
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Specification Comparison Vishay Siliconix Si1403CDL vs. Si1403BDL Description: P-Channel, 20 V (D-S) MOSFET Package: SC70-6 Pin Out: Identical Part Number Replacements: Si1403CDL-T1-GE3 replaces Si1403BDL-T1-E3 Si1403CDL-T1-GE3 replaces Si1403BDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL Si1403CDL Si1403BDL UNIT Drain-Source Voltage V - 20 - 20 DS V Gate-Source Voltage V 12 12 GS T = 25 C - 1.6 - 1.5 A Continuous Drain Current I D a T = 70 C - 1.3 - 1.2 A A Pulsed Drain Current I - 5 - 5 DM Continuous Source Current (MOSFET Diode Conduction) I - 0.5 - 0.8 S T = 25 C 0.6 0.625 A Power Dissipation P W D a T = 70 C 0.4 0.4 A Operating Junction and Storage Temperature Range T and T - 55 to 150 - 55 to 150 C J stg Maximum Junction-to-Ambient R 220 200 C/W thJA SPECIFICATIONS (T = 25 C, unless otherwise noted) J Si1403CDL Si1403BDL PARAMETER SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT Static Gate-Threshold Voltage V - 0.6 - 1.5 - 0.6 - 1.3 V GS(th) Gate-Body Leakage I 100 100 nA GSS Zero Gate Voltage Drain Current I - 1 - 1 A DSS On-State Drain Current V = - 4.5 V I - 2 - 2 A GS D(on) V = - 4.5 V 0.116 0.140 0.120 0.150 GS Drain-Source On-Resistance V = - 3.6 V R 0.133 0.160 0.140 0.175 DS(on) GS V = - 2.5 V 0.177 0.222 0.220 0.265 GS Forward Transconductance g 53.4 S fs Diode Forward Voltage V - 0.83 - 1.2 - 0.8 - 1.1 V SD Dynamic Total Gate Charge Q 48 2.9 4.5 g Gate-Source Charge Q 0.7 0.65 nC gs Gate-Drain Charge Q 1.4 1 gd Gate Resistance R 27 14 9 g Note a. T = 85 C instead of 70 C. A Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. Document Number: 67377 www.vishay.com Revision: 20-Dec-10 1X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for MOSFET category: Click to view products by Vishay manufacturer: Other Similar products are found below : 614233C 648584F MCH3443-TL-E MCH6422-TL-E FDPF9N50NZ FW231A-TL-E APT5010JVR NTNS3A92PZT5G IRF100S201 JANTX2N5237 2SK2464-TL-E 2SK3818-DL-E FCA20N60 F109 FDZ595PZ STD6600NT4G FSS804-TL-E 2SJ277-DL-E 2SK1691-DL- E 2SK2545(Q,T) D2294UK 405094E 423220D MCH6646-TL-E TPCC8103,L1Q(CM 367-8430-0972-503 VN1206L 424134F 026935X 051075F SBVS138LT1G 614234A 715780A NTNS3166NZT5G 751625C 873612G IRF7380TRHR IPS70R2K0CEAKMA1 RJK60S3DPP-E0 T2 RJK60S5DPK-M0 T0 APT5010JVFR APT12031JFLL APT12040JVR DMN3404LQ-7 NTE6400 JANTX2N6796U JANTX2N6784U JANTXV2N5416U4 SQM110N05-06L-GE3 SIHF35N60E-GE3 2SK2614(TE16L1,Q)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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