New Product Si1428EDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.045 at V = 10 V 4 GS TrenchFET Power MOSFET 30 0.049 at V = 4.5 V 4 4 nC GS Typical ESD Protection 2000 V HBM 0.060 at V = 2.5 V 4 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Portable Devices SOT-363 - Load Switch SC-70 (6-LEADS) - Battery Switch D Load Switch for Motors, Relays and Solenoids D 1 6 D Marking Code R 5 D 2 D G AS XX Lot Traceability G 3 4 S and Date Code Part Code Top View S Ordering Information: Si1428EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 12 GS a T = 25 C 4 C a = 70 C 4 T C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4 A b, c T = 70 C 3.7 A A Pulsed Drain Current (t = 300 s) I 20 DM a T = 25 C 2.3 C Continuous Source-Drain Diode Current I S b, c T = 25 C 1.3 A T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation P W D b, c T = 25 C 1.56 A b, c T = 70 C 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 60 80 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Notes: a. Package limited, T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 C/W. Document Number: 67825 www.vishay.com S11-0861-Rev. A, 02-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYNew Product Si1428EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J Gate-Source Threshold Voltage V 0.6 1.3 V V = V , I = 250 A GS(th) DS GS D V = 0 V, V = 4.5 V 0.5 DS GS Gate-Source Leakage I GSS 25 V = 0 V, V = 12 V DS GS A V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 15 A D(on) DS GS V = 10 V, I = 3.7 A 0.036 0.045 GS D a Drain-Source On-State Resistance R V = 4.5 V, I = 3.6 A 0.040 0.049 DS(on) GS D V = 2.5 V, I = 1.5 A 0.048 0.060 GS D a Forward Transconductance g V = 15 V, I = 3.7 A 17 S fs DS D b Dynamic V = 15 V, V = 10 V, I = 4.7 A 8.8 13.5 DS GS D Total Gate Charge Q g 46 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 4.7 A 0.9 gs DS GS D Gate-Drain Charge Q 1.1 gd Gate Resistance R f = 1 MHz 0.4 2 4 k g Turn-On Delay Time t 0.29 0.58 d(on) Rise Time t 0.4 0.8 V = 15 V, R = 4.1 r DD L I 3.7 A, V = 4.5 V, R = 1 Turn-Off DelayTime t 1.9D GEN g 3.8 d(off) Fall Time t 0.75 1.5 f s Turn-On Delay Time t 0.1 0.2 d(on) Rise Time t 0.15 0.3 r V = 15 V, R = 4.1 DD L I 3.7 A, V = 10 V, R = 1 Turn-Off DelayTime t 36D GEN g d(off) Fall Time t 0.75 1.5 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 2.3 S C A Pulse Diode Forward Current I 20 SM Body Diode Voltage V I = 3.7 A, V = 0 V 0.85 1.2 V SD S GS Body Diode Reverse Recovery Time t 12 25 ns rr Body Diode Reverse Recovery Charge Q 510 nC rr I = 3.7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6.5 a ns Reverse Recovery Rise Time t 5.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67825 2 S11-0861-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000