Si3417DV Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET d,e V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g 100 % R and UIS Tested D g Material categorization: 0.0252 at V = - 10 V - 8 GS - 30 15 nC For definitions of compliance please see 0.0360 at V = - 4.5 V - 8 GS www.vishay.com/doc 99912 Available TSOP-6 Top View APPLICATIONS Load Switches D D 1 6 S Adaptor Switch DC/DC Converter 3 mm D 5 D 2 For Mobile Computing/Consumer G G S 3 4 Marking Code BH XX 2.85 mm Lot Traceability and Date Code D Part Code Ordering Information: P-Channel MOSFET Si3417DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS e T = 25 C - 8 C e T = 70 C - 8 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 7.3 A a, b T = 70 C - 5.8 A A I Pulsed Drain Current (t = 100 s) - 50 DM T = 25 C - 3.5 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 1.7 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 4.2 C T = 70 C 2.7 C P Maximum Power Dissipation W D a, b T = 25 C 2 A a, b T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 40 62.5 thJA C/W R Maximum Junction-to-Foot Steady State 25 30 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 C/W. d. Based on T = 25 C. C e. Package limited. Document Number: 62890 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1815-Rev. A, 12-Aug-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi3417DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 7.3 A 0.0210 0.0252 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 6.1 A 0.0300 0.0360 GS D a g V = - 10 V, I = - 7.3 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1350 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 215 pF oss DS GS C Reverse Transfer Capacitance 185 rss V = - 15 V, V = - 10 V, I = - 7.3 A 32 50 DS GS D Q Total Gate Charge g 15 25 nC Q V = - 15 V, V = - 4.5 V, I = - 7.3 A Gate-Source Charge 4 gs DS GS D Q Gate-Drain Charge 7.5 gd R Gate Resistance f = 1 MHz 1.2 5.8 11.6 g t Turn-On Delay Time 10 15 d(on) t V = - 15 V, R = 2.6 Rise Time 815 r DD L t I - 5.8 A, V = - 10 V, R = 1 Turn-Off DelayTime 45 70 d(off) D GEN g t Fall Time 12 25 f ns t Turn-On Delay Time 42 70 d(on) t V = - 15 V, R = 2.6 Rise Time 35 60 r DD L t I - 5.8 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 40 70 d(off) D GEN g t Fall Time 16 30 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 3.5 S C A Pulse Diode Forward Current (t = 100 s) I - 50 SM Body Diode Voltage V I = - 5.8 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 34 60 ns rr Body Diode Reverse Recovery Charge Q 22 40 nC I = - 5.8 A, dI/dt = 100 A/s, rr F T = 25 C Reverse Recovery Fall Time t 11 J a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62890 2 S13-1815-Rev. A, 12-Aug-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000