Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Available 0.032 at V = - 4.5 V - 5.3 GS TrenchFET Power MOSFET 0.042 at V = - 2.5 V - 12 - 4.6 GS 0.059 at V = - 1.8 V APPLICATIONS - 3.9 GS Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2333DS (E3)* * Marking Code Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free) Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.3 - 4.1 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.2 - 3.3 A A Pulsed Drain Current I - 20 DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 72023 www.vishay.com S09-0130-Rev. C, 02-Feb-09 1Si2333DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 0.40 - 1.0 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 9.6 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 9.6 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 5.3 A 0.025 0.032 GS D a R V = - 2.5 V, I = - 4.6 A 0.033 0.042 Drain-Source On-Resistance DS(on) GS D V = - 1.8 V, I = - 2.0 A 0.046 0.059 GS D a g V = - 5 V, I = - 5.3 A 17 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage - 0.7 - 1.2 V SD S GS b Dynamic Q Total Gate Charge 11.5 18 g V = - 6 V, V = - 4.5 V DS GS Gate-Source Charge Q 1.5 nC gs I - 5.3 A D Q Gate-Drain Charge 3.2 gd C Input Capacitance 1100 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 390 pF oss DS GS C Reverse Transfer Capacitance 300 rss c Switching t 25 40 d(on) Turn-On Time V = - 6 V, R = 6 DD L t 45 70 r I - 1.0 A, V = - 4.5 V ns D GEN t 72 110 d(off) R = 6 Turn-Off Time G t 60 90 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72023 2 S09-0130-Rev. C, 02-Feb-09