X-On Electronics has gained recognition as a prominent supplier of SI2337DS-T1-E3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2337DS-T1-E3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI2337DS-T1-E3 Vishay

SI2337DS-T1-E3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2337DS-T1-E3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 80V 2.2A 2.5W
Surface-mount dual N-channel power MOSFET with low RDS(on).
Datasheet: SI2337DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7176 ea
Line Total: USD 0.72

Availability - 83774
Ships to you between
Wed. 12 Jun to Fri. 14 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4835

5820 - WHS 2


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.5033

136 - WHS 3


Ships to you between
Thu. 13 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8291
10 : USD 0.6872
30 : USD 0.6161
100 : USD 0.5452
500 : USD 0.4699
1000 : USD 0.4491

83774 - WHS 4


Ships to you between Wed. 12 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7176
10 : USD 0.6451
100 : USD 0.5463
500 : USD 0.5002
1000 : USD 0.4542
3000 : USD 0.4335
6000 : USD 0.4335
9000 : USD 0.4174
24000 : USD 0.4163

14550 - WHS 5


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 1.0435

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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We are delighted to provide the SI2337DS-T1-E3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2337DS-T1-E3 and other electronic components in the MOSFET category and beyond.

The SI2337DS-T1-E3 is an N Channel enhancement mode MOSFET manufactured by Vishay. It has a maximum drain current of 2.7A and a breakdown voltage of 37V. It has a low on-state resistance of 0.017 Ohm and a maximum Gate-Source Voltage of +/- 12V. This part is designed for use in switching applications requiring moderate load and low power loss. It is housed in the space saving SOT-23 package and has a maximum junction temperature of 150C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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