SI2337DS-T1-E3 Vishay

SI2337DS-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI2337DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2337DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2337DS-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 80V 2.2A 2.5W Surface-mount dual N-channel power MOSFET with low RDS(on).
Datasheet:	SI2337DS-T1-E3 Datasheet (PDF)

Price (USD)

3000: USD 0.3611 ea
Line Total: USD 1083.3

Availability : 0

Qty	Unit Price
3000	$ 0.3611
6000	$ 0.3611
9000	$ 0.3546
12000	$ 0.3546
15000	$ 0.3482

SI2337DS-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 4564

Ship by Wed. 24 Sep to Fri. 26 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.525
10	$ 0.7775
100	$ 0.5291
500	$ 0.4675
1000	$ 0.4312
3000	$ 0.4147
6000	$ 0.4147
9000	$ 0.4147
24000	$ 0.4136

We are delighted to provide the SI2337DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2337DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2337DS-T1-E3 is an N Channel enhancement mode MOSFET manufactured by Vishay. It has a maximum drain current of 2.7A and a breakdown voltage of 37V. It has a low on-state resistance of 0.017 Ohm and a maximum Gate-Source Voltage of +/- 12V. This part is designed for use in switching applications requiring moderate load and low power loss. It is housed in the space saving SOT-23 package and has a maximum junction temperature of 150C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 2.2 A 2.2 A
Vds - Drain-Source Breakdown Voltage 80 V 80 V
Rds On - Drain-Source Resistance 270 mOhms 270 mOhms
Transistor Polarity P - Channel P - Channel
Vgs th - Gate-Source Threshold Voltage 2 V 2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.5 W 2.5 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 236 - 3 TO - 236 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage - 10 V - 10 V
Qg - Gate Charge 17 nC 17 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current 1.2 A 1.2 A
Drain-Source Breakdown Voltage 80 V 80 V
Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Power Dissipation 760 mW 760 mW
Rds On 270 Mohms 270 Mohms
Fall Time 15 ns 15 ns
Rise Time 15 ns 15 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 20 ns 20 ns
Height 1.45 mm 1.45 mm
Length 2.9 mm 2.9 mm
Series Si2 Si2
Transistor Type 1 P - Channel 1 P - Channel
Width 1.6 mm 1.6 mm
Forward Transconductance - Min 4.3 S 4.3 S
Cnhts 8541210000 8541210000
Hts Code 8541210095 8541210095
Mxhts 85412101 85412101