SI2318DS-T1-GE3 Vishay

Si2318DS Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.045 at V = 10 V 3.9 GS TrenchFET Power MOSFET 40 0.058 at V = 4.5 V 3.5 GS APPLICATIONS Stepper Motors Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2318DS( C8)* *Marking Code Ordering Information: Si2318DS-T1-E3 (Lead (Pb)-free) Si2318DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 40 DS V Gate-Source Voltage V 20 GS T = 25 C 3.9 3.0 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 3.1 2.4 A A b I 16 Pulsed Drain Current DM a, b I 0.8 Continuous Source Current (Diode Conduction) S T = 25 C 1.25 0.75 A a, b P W Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature Document Number: 72322 www.vishay.com S09-0130-Rev. B, 02-Feb-09 1Si2318DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 (BR)DSS GS D V V V = V , I = 250 A Gate-Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 32 V, V = 0 V 0.5 DS GS Zero Gate Voltage Drain Current I A DSS V = 32 V, V = 0 V, T = 55 C 10 DS GS J a I V 4.5 V, V = 10 V 6A On-State Drain Current D(on) DS GS V = 10 V, I = 3.9 A 0.036 0.045 GS D a R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 3.5 A 0.045 0.058 GS D a g V = 10 V, I = 3.9 A 11 S Forward Transconductance fs DS D V I = 1.25 A, V = 0 V Diode Forward Voltage 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 10 15 g Q V = 20 V, V = 10 V, I = 3.9 A Gate-Source Charge 1.6 nC gs DS GS D Gate-Drain Charge Q 2.1 gd R Gate Resistance 1.8 g C Input Capacitance 540 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 80 pF oss DS GS C Reverse Transfer Capacitance 45 rss Switching t Turn-On Delay Time 510 d(on) t Rise Time V = 20 V, R = 20 12 20 r DD L ns I 1.0 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 20 30 d(off) t Fall Time 15 25 f Notes: a. Pulse test PW 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 V thru 5 V GS 4 V 16 16 12 12 8 8 T = 125 C C 4 4 1 V, 2 V 25 C 3 V - 55 C 0 0 02468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V - Drain-to-Source V oltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72322 2 S09-0130-Rev. B, 02-Feb-09 I - Drain Current (A) D I - Drain Current (A) D