Product Information

SI2335DS-T1-E3

SI2335DS-T1-E3 electronic component of Vishay

Datasheet
MOSFET 12V 4.0A
Low-profile, industrial grade, N-channel MOSFET with a maximum Rds(on) of 23mO.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2475 ea
Line Total: USD 0.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.2475
5 : USD 0.2415
50 : USD 0.2294
250 : USD 0.1992
1000 : USD 0.1787
2500 : USD 0.1714

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

The Vishay SI2335DS-T1-E3 is an N-Channel Enhancement Mode MOSFET transistor. It has a drain-source voltage of 30 V and a drain current of 12.5 A (continuous). It features a low on-resistance (Rdson) of 0.7 mOhm, making it ideal for power solutions with high efficiency, high current levels, and low power losses. The transistor is RoHS compliant and has a drain-source approximate capacitance of 2.6 pF.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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