SI2335DS-T1-E3 Vishay

SI2335DS-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI2335DS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2335DS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2335DS-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 12V 4.0A Low-profile, industrial grade, N-channel MOSFET with a maximum Rds(on) of 23mO.
Datasheet:	SI2335DS-T1-E3 Datasheet (PDF)

Price (USD)

1: USD 0.2398 ea
Line Total: USD 0.24

Availability : 0

Qty	Unit Price
1	$ 0.2398
5	$ 0.234
50	$ 0.2223
250	$ 0.1931
1000	$ 0.1732
2500	$ 0.1661

SI2335DS-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.2398
5	$ 0.234
50	$ 0.2223
250	$ 0.1931
1000	$ 0.1732
2500	$ 0.1661

We are delighted to provide the SI2335DS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2335DS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Vishay SI2335DS-T1-E3 is an N-Channel Enhancement Mode MOSFET transistor. It has a drain-source voltage of 30 V and a drain current of 12.5 A (continuous). It features a low on-resistance (Rdson) of 0.7 mOhm, making it ideal for power solutions with high efficiency, high current levels, and low power losses. The transistor is RoHS compliant and has a drain-source approximate capacitance of 2.6 pF.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage - 12 V - 12 V
Rds On - Drain-Source Resistance 51 mOhms 51 mOhms
Transistor Polarity p - channel p - channel
Vgs - Gate-Source Breakdown Voltage 8 V 8 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 750 mW 750 mW
Mounting Style smd/smt smd/smt
Package / Case SOT - 23 - 3 SOT - 23 - 3
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 15 ns 15 ns
Rise Time 15 ns 15 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 50 ns 50 ns