Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested g 0.089 at V = -10 V -5.1 GS -60 10.1 nC Material categorization: 0.146 at V = -4.5 V -4 GS For definitions of compliance please see TSOP-6 Single www.vishay.com/doc 99912 S 4 APPLICATIONS D S 5 Load switches D 6 DC/DC converter G 3 G 2 D 1 D Top View D Marking Code: BL P-Channel MOSFET Ordering Information: Si3127DV-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -5.1 C T = 70 C -4.1 C Continuous Drain Current (T = 150 C) I J D a,b T = 25 C -3.5 A a,b T = 70 C -2.8 A A Pulsed Drain Current (t = 100 s) I -20 DM T = 25 C -3.5 C Continuous Source-Drain Diode Current I S a,b T = 25 C -1.7 A Avalanche Current I -15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 4.2 C T = 70 C 2.7 C Maximum Power Dissipation P W D a,b T = 25 C 2 A a,b T = 70 C 1.3 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a,c Maximum Junction-to-Ambient t 10 s R 40 62.5 thJA C/W Maximum Junction-to-Foot Steady State R 25 30 thJF Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 110 C/W. d. Based on T = 25 C. C S14-0767-Rev. A, 14-Apr-14 Document Number: 64282 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3127DV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - V DS GS D V Temperature Coefficient V /T --6.7 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -4.3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -60 V, V = 0 V, T = 55 C - - -5 DS GS J a On-State Drain Current I V -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -3.5 A - 0.074 0.089 GS D a Drain-Source On-State Resistance R DS(on) V = -4.5 V, I = -2.8 A - 0.095 0.146 GS D a Forward Transconductance g V = -30 V, I = -3.5 A - 11 - S fs DS D b Dynamic Input Capacitance C - 832 - iss Output Capacitance C -8V = -30 V, V = 0 V, f = 1 MHz8- pF oss DS GS Reverse Transfer Capacitance C -63- rss V = -30 V, V = -10 V, I = -3.5 A - 20 30 DS GS D Total Gate Charge Q g - 10.1 15.2 nC Gate-Source Charge Q V = -30 V, V = -4.5 V, I = -3.5 A -3.3 - gs DS GS D Gate-Drain Charge Q -3.9- gd Gate Resistance R f = 1 MHz 1.8 9 18 g Turn-On Delay Time t -8 16 d(on) Rise Time t -6 12 r V = -30 V, R = 10.7 DD L I -2.8 A, V = -10 V, R = 1 D GEN g Turn-Off DelayTime t -3553 d(off) Fall Time t -16 24 f ns Turn-On Delay Time t -40 60 d(on) Rise Time t -28 42 r V = -30 V, R = 10.7 DD L I -2.8 A, V = -4.5 V, R = 1 D GEN g Turn-Off DelayTime t -3147 d(off) Fall Time t -15 23 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - - -3.5 S C A Pulse Diode Forward Current (t = 100 s) I -- -20 SM Body Diode Voltage V I = -2.8 A, V = 0 V - -0.85 -1.2 V SD S GS Body Diode Reverse Recovery Time t -32 48 ns rr Body Diode Reverse Recovery Charge Q -45 68 nC rr I = -2.8 A, dI/dt = 100 A/s, F T = 25 C J Reverse Recovery Fall Time t -24 - a ns Reverse Recovery Rise Time t -8 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0767-Rev. A, 14-Apr-14 Document Number: 64282 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000