Product Information

SI3424DV-T1-E3

SI3424DV-T1-E3 electronic component of Vishay

Datasheet
MOSFET 30V 6.7A 2W
Surface-mount ultracompact rectifier with reverse voltage of 200V and forward current of 3A.

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9656 ea
Line Total: USD 1.97

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.9656
25 : USD 1.6458
100 : USD 1.3572
250 : USD 1.1622
500 : USD 1.0296
1000 : USD 0.975

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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The Vishay SI3424DV-T1-E3 is a 315 mA, 20 V, low side MOSFET Driver IC, designed for driving power MOSFETs and IGBTs. It features a high-speed gate driver with a maximum output frequency of 25 MHz, low propagation delay of 44 ns, and high slew rate of 60 V/ns. It also contains a 1.8 V regulator to support the gate drive circuitry and on-chip ESD protection. This device is housed in a SOIC-8 package and is rated for operation in the temperature range of -40 °C to +125 °C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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