Si3469DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.030 at V = - 10 V - 6.7 GS TrenchFET Power MOSFET - 20 0.051 at V = - 4.5 V - 5.1 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch - Notebook PC - Game Machine TSOP-6 - Desktop Top V iew 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3469DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3469DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 20 GS T = 25 C - 6.7 - 5.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.3 - 4.0 A A I Pulsed Drain Current - 25 DM a I - 1.7 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.14 A a P W Maximum Power Dissipation D = 70 C T 1.3 0.73 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 45 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 25 30 thJF Note: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72676 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1Si3469DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 85 C - 5 DS GS J a I V - 5 V, V = - 10 V - 25 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 6.7 A 0.024 0.030 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2 A 0.041 0.051 GS D a g V = - 15 V, I = - 6.7 A 15 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 20 30 g Q V = - 10 V, V = - 10 V, I = - 6.7 A Gate-Source Charge 3.8 nC gs DS GS D Gate-Drain Charge Q 4.8 gd R Gate Resistance f = 1 MHz 9 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 10 V, R = 10 12 20 r DD L I - 1 A, V = - 10 V, R = 6 Turn-Off Delay Time t 50 75 ns D GEN g d(off) t Fall Time 35 55 f Source-Drain Reverse Recovery Time t I = - 1.7 A, dI/dt = 100 A/s 25 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 25 V = 10 V thru 5 V GS 20 20 15 15 4 V 10 10 T = 125 C C 5 5 25 C 3 V - 55 C 0 0 0 1234 5 0.0 1.0 2.0 3.0 4.0 5.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72676 2 S09-2110-Rev. B, 12-Oct-09 I - Drain Current (A) D I - Drain Current (A) D