X-On Electronics has gained recognition as a prominent supplier of SI3475DV-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI3475DV-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI3475DV-T1-GE3 Vishay

SI3475DV-T1-GE3 electronic component of Vishay
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Part No.SI3475DV-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
Datasheet: SI3475DV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.4459 ea
Line Total: USD 1337.7

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.4459

   
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We are delighted to provide the SI3475DV-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3475DV-T1-GE3 and other electronic components in the MOSFET category and beyond.

Si3475DV Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 1.61 at V = - 10 V - 0.95 TrenchFET Power MOSFET GS - 200 8 nC 100 % R and UIS Tested 1.65 at V = - 6 V - 0.93 g GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TSOP-6 Top View S D D 1 6 3 mm D 5 D 2 Marking Code G AI XXX G S 3 4 Lot Traceability and Date Code Part Code 2.85 mm D Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free) Si3475DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS a T = 25 C - 0.95 C T = 70 C - 0.77 C Continuous Drain Current (T = 150 C) I J D b,c T = 25 C - 0.75 A b,c T = 70 C - 0.59 A A I - 3 Pulsed Drain Current DM - 2.6 T = 25 C C I Continuous Source-Drain Diode Current S b,c T = 25 C 1.6 A Avalanche Current I 3 AS L = 0.1 mH Single-Pulse Avalanche Energy E 0.45 mJ AS T = 25 C 3.2 C T = 70 C 2.1 C P Maximum Power Dissipation W D b,c T = 25 C 2 A b,c T = 70 C 1.25 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 51 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot Steady State 32 39 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 74249 www.vishay.com S09-0766-Rev. B, 04-May-09 1Si3475DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 V DS GS D V Temperature Coefficient V /T - 240 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 6.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 200 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 200 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 10 V - 2 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.9 A 1.34 1.61 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 0.7 A 1.37 1.65 GS D a g V = - 10 V, I = - 0.9 A 3.5 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 500 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 26 pF oss DS GS C Reverse Transfer Capacitance 18 rss V = - 100 V, V = - 10 V, I = - 1 A 11.7 18 DS GS D Q Total Gate Charge g 7.8 12 nC Q V = - 100 V, V = - 6 V, I = - 1 A Gate-Source Charge 2 gs DS GS D Q Gate-Drain Charge 3.7 gd R Gate Resistance f = 1 MHz 9 14 g t Turn-On Delay Time 914 d(on) t V = - 100 V, R = 100 Rise Time 11 18 r DD L t I - 1 A, V = - 10 V, R = 1 Turn-Off DelayTime 28 42 d(off) D GEN g t Fall Time 12 18 f ns t Turn-On Delay Time 14 21 d(on) t V = - 100 V, R = 100 Rise Time 29 44 r DD L t I - 1 A, V = - 6 V, R = 1 Turn-Off DelayTime 23 35 d(off) D GEN g t Fall Time 14 21 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current - 0.95 S C A I Pulse Diode Forward Current - 3 SM V I = - 1 A, V = 0 V Body Diode Voltage - 0.81 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 84 130 ns rr Q Body Diode Reverse Recovery Charge 235 350 nC rr I = - 1.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 46 a ns t Reverse Recovery Rise Time 38 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74249 2 S09-0766-Rev. B, 04-May-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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