New Product Si3477DV Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0175 at V = - 4.5 V - 8 GS TrenchFET Power MOSFET - 12 0.023 at V = - 2.5 V - 8 28.3 nC GS PWM Optimized 0.033 at V = - 1.8 V - 8 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch TSOP-6 (4) S Top View DC/DC Converters 1 6 3 mm 5 2 (3) G Marking Code BB XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3477DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 10 GS a T = 25 C - 8 C a T = 70 C - 8 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 8 A b, c T = 70 C - 7.2 A A Pulsed Drain Current I - 40 DM T = 25 C - 3.5 C Continuous Source-Drain Diode Current I b, c S T = 25 C - 1.67 A T = 25 C 4.2 C T = 70 C 2.7 C Maximum Power Dissipation P W D b, c T = 25 C 2.0 A b, c T = 70 C 1.3 A T , T - 55 to 150 C Operating Junction and Storage Temperature Range J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R Maximum Junction-to-Ambient 50 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 22 30 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 70865 www.vishay.com S10-1536-Rev. A, 19-Jul-10 1New Product Si3477DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 4.1 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1.0 V GS(th) DS GS D I V = 0 V, V = 10 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 9 A 0.014 0.0175 GS D a R V - 2.5 V, I = - 7.9 A 0.019 0.023 Drain-Source On-State Resistance DS(on) GS D V - 1.8 V, I = - 2.2 A 0.026 0.033 GS D a g V = - 6 V, I = - 9 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2600 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 620 pF oss DS GS C Reverse Transfer Capacitance 625 rss V = - 6 V, V = - 10 V, I = - 9 A 58 90 DS GS D Q Total Gate Charge g 28.3 45 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 9 A 4.2 gs DS GS D Gate-Drain Charge Q 7.8 gd R Gate Resistance f = 1 MHz 0.9 4.5 9.0 g Turn-On Delay Time t 25 40 d(on) t Rise Time V = - 6 V, R = 0.83 30 45 r DD L I - 7.2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 65 100 D GEN g d(off) t Fall Time 35 55 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 6 V, R = 0.83 10 15 r DD L - 7.2 A, V = - 10 V, R = 1 I Turn-Off Delay Time t D GEN g 65 100 d(off) t Fall Time 30 45 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 3.5 S C A a I - 40 Pulse Diode Forward Current SM Body Diode Voltage V I = - 7.2 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 50 75 ns rr Q Body Diode Reverse Recovery Charge 30 45 nC rr I = - 7.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 21 a ns t Reverse Recovery Rise Time 29 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70865 2 S10-1536-Rev. A, 19-Jul-10