New Product Si4431CDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.032 at V = - 10 V - 9.0 TrenchFET Power MOSFET GS - 30 13 nC 100 % R Tested 0.049 at V = - 4.5 V - 5.8 g GS APPLICATIONS Load Switch Battery Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4431CDY-T1-E3 (Lead (Pb)-free) Si4431CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 9.0 C T = 70 C - 7.2 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 7.0 A a, b T = 70 C - 5.6 A A I - 30 Pulsed Drain Current DM - 3.5 T = 25 C C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.1 A T = 25 C 4.2 C T = 70 C 2.7 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c Maximum Junction-to-Ambient t 10 s R 40 50 thJA C/W Maximum Junction-to-Foot R 24 30 Steady State thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 C/W. d. Based on T = 25 C. C Document Number: 68748 www.vishay.com S09-0322-Rev. B, 02-Mar-09 1New Product Si4431CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 7.0 A 0.026 0.032 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 5.6 A 0.037 0.049 GS D a g V = - 15 V, I = - 7.0 A 18 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1006 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 180 pF oss DS GS C Reverse Transfer Capacitance 145 rss V = - 15 V, V = - 10 V, I = - 7.0 A 25 38 DS GS D Q Total Gate Charge g 13 20 nC Q V = - 15 V, V = - 4.5 V, I = - 7.0 A Gate-Source Charge 3.5 gs DS GS D Q Gate-Drain Charge 5.5 gd R Gate Resistance f = 1 MHz 0.4 2.0 4.0 g t Turn-On Delay Time 10 20 d(on) t V = - 15 V, R = 2.7 Rise Time 13 20 r DD L t I - 5.6 A, V = - 10 V, R = 1 Turn-Off DelayTime 23 35 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 38 57 d(on) t V = - 15 V, R = 2.7 Rise Time 89 134 r DD L t I - 5.6 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 22 33 d(off) D GEN g t Fall Time 11 17 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 3.5 S C A Pulse Diode Forward Current I - 30 SM Body Diode Voltage V I = - 5.6 A, V = 0 V - 0.71 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 22 33 ns rr Body Diode Reverse Recovery Charge Q 17 26 nC rr I = - 5.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 9 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68748 2 S09-0322-Rev. B, 02-Mar-09