Si4485DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.042 at V = - 10 V - 6 TrenchFET Power MOSFET GS - 30 7 nC 100 % R Tested 0.072 at V = - 4.5 V g - 6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch Notebook Adaptor Switch S SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 Top View D P-Channel MOSFET Ordering Information: Si4485DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS e T = 25 C - 6 C e T = 70 C - 6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 5.9 A b, c T = 70 C A - 4.7 A Pulsed Drain Current I - 25 DM T = 25 C - 4.2 C Continous Source-Drain Diode Current I S b, c T = 25 C - 2 A T = 25 C 5 C T = 70 C 3.2 C Maximum Power Dissipation P W D b, c T = 25 C 2.4 A b, c T = 70 C 1.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 42 53 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 19 25 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. e. Package Limited. Document Number: 64989 www.vishay.com S09-0999-Rev. A, 01-Jun-09 1 Si4485DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V /T V Temperature Coefficient - 19 DS J DS I = - 250 A mV/C D V /T V Temperature Coefficient 4.4 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 25 A D(on) DS GS V = - 10 V, I = - 5.9 A 0.035 0.042 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 4.5 A 0.060 0.072 GS D a g V = - 15 V, I = - 5.9 A Forward Transconductance 10 S fs DS D b Dynamic Input Capacitance C 590 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 115 pF oss DS GS Reverse Transfer Capacitance C 93 rss V = - 15 V, V = - 10 V, I = - 5.9 A 13.6 21 DS GS D Q Total Gate Charge g 711 nC Gate-Source Charge Q 2.3 V = - 15 V, V = - 4.5 V, I = - 5.9 A gs DS GS D Q Gate-Drain Charge 3.2 gd Gate Resistance R f = 1 MHz 1 5 10 g t Turn-On Delay Time 30 45 d(on) t Rise Time V = - 15 V, R = 3.2 25 38 r DD L I - 4.7 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 24 d(off) t Fall Time 816 f ns t Turn-On Delay Time 816 d(on) t Rise Time V = - 15 V, R = 3.2 10 20 r DD L I - 4.7 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 18 27 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 4.2 S C A I Pulse Diode Forward Current - 25 SM Body Diode Voltage V I = - 4.7 A, V = 0 V - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 17 26 ns rr Body Diode Reverse Recovery Charge Q 918 nC rr I = - 4.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64989 2 S09-0999-Rev. A, 01-Jun-09