New Product Si4491EDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Extended V range ( 25 V) for adaptor switch GS a V (V) R () Max. Q (Typ.) applications I DS DS(on) g D Extremely low R DS(on) 0.0065 at V = - 10 V GS - 29 TrenchFET Power MOSFET - 30 0.0082 at V = - 6 V - 23 66 nC GS 100 % R and UIS Tested g 0.0112 at V = - 4.5 V - 20 GS Typical ESD Performance: 4000 V (HBM) Material categorization: For definitions of compliance SO-8 please see www.vishay.com/doc 99912 APPLICATIONS S 1 8 D S Adaptor Switch, Load Switch 2 7 S D Power Management 3 6 S D Notebook Computers and Portable G 4 5 D Battery Packs G Top View Ordering Information: Si4491EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V - 30 Drain-Source Voltage DS V V Gate-Source Voltage 25 GS T = 25 C C - 25.8 T = 70 C - 20.7 C Continuous Drain Current (T = 150 C) I J D T = 25 C A - 17.3 b, c T = 70 C - 13.9 A A I Pulsed Drain Current (t = 300 s) - 60 DM b, c T = 25 C - 5.8 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.6 A I - 40 Single Pulse Avalanche Current AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 6.9 C T = 70 C 4.4 C P Maximum Power Dissipation W D b, c T = 25 C A 3.1 b, c T = 70 C 2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 10 s 33 40 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 15 17 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 C/W. Document Number: 63866 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2337-Rev. B, 01-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4491EDY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 24 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 6 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.8 V GS(th) DS GS D V = 0 V, V = 25 V 150 DS GS I Gate-Source Leakage GSS V = 0 V, V = 20 V 15 DS GS A V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V - 10 V, I = - 13 A 0.0054 0.0065 GS D a R V - 6 V, I = - 10 A 0.0068 0.0082 Drain-Source On-State Resistance DS(on) GS D V - 4.5 V, I = - 8 A 0.0093 0.0112 GS D a g V = - 15 V, I = - 13 A 44 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4620 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 880 pF oss DS GS C Reverse Transfer Capacitance 820 rss V = - 15 V, V = - 10 V, I = - 17.3 A 102 153 DS GS D Q Total Gate Charge g 66 80 nC Gate-Source Charge Q = - 15 V, V = - 5 V, I = - 17.3 A 16 V gs DS GS D Q Gate-Drain Charge 28 gd Gate Resistance R f = 1 MHz 0.3 1.3 2.6 g t Turn-On Delay Time 70 105 d(on) Rise Time t 70 105 V = 0 V, R = 1.5 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 45 68 d(off) Fall Time t 27 41 f ns t Turn-On Delay Time 18 30 d(on) t Rise Time V = - 15 V, R = 1.5 15 25 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 52 80 d(off) t Fall Time 14 25 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 5.8 S C A I Pulse Diode Forward Current - 60 SM V I = - 10 A, V = 0 V Body Diode Voltage - 0.78 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 35 53 ns rr Q Body Diode Reverse Recovery Charge 25 38 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63866 2 S12-2337-Rev. B, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000