New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0192 at V = - 10 V - 8 TrenchFET Power MOSFET GS - 20 20 100 % R and UIS Tested 0.0330 at V = - 4.5 V - 8 g GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching - Computer SO-8 S S 1 2 - Game Systems S D 1 8 1 1 Battery Switching - 2-Cell Li-Ion G D 1 2 7 1 S D G G 3 6 1 2 2 2 G D 2 4 5 2 Top View D D Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free) 1 2 Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 20 GS e T = 25 C - 8 C e T = 70 C - 8 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C - 8 A b, c T = 70 C - 6.7 A I - 30 A Pulsed Drain Current (10 s Pulse Width) DM T = 25 C - 2.5 C I Source-Drain Current Diode Current S b, c T = 25 C - 1.7 A I Pulsed Sorce-Drain Current - 30 SM I - 11 Single Pulse Avalanche Current AS L = 0.1 mH Single-Pulse Avalanche Energy E 6mJ AS T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C 1.28 A T , T Operating Junction and Storage Temperature Range - 50 to 150 C J stg THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit b, d R t 10 s 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. e. Package Limited. Document Number: 69985 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1New Product Si4943CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 21 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.4 GS(th) GS(th) J Gate Threshold Voltage V V = V , I = - 250 A - 1 - 3 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J b I V = 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 8.3 A 0.0160 0.0192 GS D b R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 6.4 A 0.0275 0.0330 GS D b g V = - 10 V, I = - 8.3 A 19 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 1945 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 460 pF oss DS GS C Reverse Transfer Capacitance 385 rss V = - 10 V, V = - 10 V, I = - 8.3 A 41 62 DS GS D Q Total Gate Charge g 20 30 nC Q V = - 10 V, V = - 4.5 V, I = - 8.3 A Gate-Source Charge 7 gs DS GS D Q Gate-Drain Charge 9 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 13 20 d(on) t V = - 10 V, R = 1.5 Rise Time 11 17 r DD L t I - 6.7 A, V = - 10 V, R = 1 Turn-Off Delay Time 35 53 d(off) D GEN g t Fall Time 10 15 f ns t Turn-On Delay Time 50 75 d(on) t V = - 10 V, R = 1.5 Rise Time 71 107 r DD L t I - 6.7 A, V = - 4.5 V, R = 1 Turn-Off Delay Time 29 44 d(off) D GEN g t Fall Time 15 23 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C - 2.5 S C Current A a I - 30 Pulse Diode Forward Current SM V I = - 6.7 A Body Diode Voltage - 0.77 - 1.2 V SD S t Body Diode Reverse Recovery Time 30 45 ns rr Q Body Diode Reverse Recovery Charge 17 26 nC rr I = - 6.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 17 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69985 2 S09-0704-Rev. B, 27-Apr-09