Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.105 at V = - 4.5 V - 4 GS LITTLE FOOT Plus Schottky Power MOSFET 0.143 at V = - 2.5 V - 20 - 3.8 4.7 nC GS Compliant to RoHS Directive 2002/95/EC 0.188 at V = - 1.8 V - 3 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Charging Switch for Portable Devices - With Integrated Low V Trench Schottky Diode V (V) f f V (V) I (A) Diode Forward Voltage KA F 20 0.46 at 0.5 A 1 1206-8 ChipFET 1 S K A K A K S Marking Code G D G JH XX Lot Traceability D and Date Code Part Code Bottom View D A Ordering Information: Si5853DDC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si5853DDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage (MOSFET) V - 20 DS Reverse Voltage (Schottky) V 20 V KA Gate-Source Voltage (MOSFET) V 8 GS a T = 25 C - 4 C - 3.5 T = 70 C C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 2.9 A b, c T = 70 C - 2.3 A Pulsed Drain Current (MOSFET) I - 10 A DM T = 25 C - 2.6 C Continuous Source Current (MOSFET Diode Conduction) I S b, c T = 25 C A - 1.1 Average Forward Current (Schottky) I 1 F Pulsed Forward Current (Schottky) I 3 FM T = 25 C 3.1 C T = 70 C 2 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.3 A b, c T = 70 C 0.8 A P W D T = 25 C 2.5 C T = 70 C 1.6 C Maximum Power Dissipation (Schottky) T = 25 C 1.2 A T = 70 C 0.76 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendation (Peak Temperature) Document Number: 68979 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1Si5853DDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, c, f R 77 95 Maximum Junction-to-Ambient (MOSFET) thJA Maximum Junction-to-Foot (Drain) (MOSFET) R 33 40 thJF C/W b, c, g R 85 105 Maximum Junction-to-Ambient (Schottky) thJA R Maximum Junction-to-Foot (Drain) (Schottky) 40 50 thJF Notes: a. Package limited. b. Surface mounted on FR4 board. c. t 5 s. d. See Solder Profile (www.vishay.com/doc 73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f .Maximum under steady state conditions for MOSFETs is 130 C/W. g. Maximum under steady state conditions for Schottky is 125 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V - 13 DS DS/TJ I = - 250 A mV/C D V Temperature Coefficient V 2.4 GS(th) GS(th)/TJ Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.9 A 0.085 0.105 GS D a R V = - 2.5 V, I = - 2.5 A 0.117 0.143 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1.5 A 0.155 0.188 GS D a g V = - 10 V, I = - 2.9 A 7S Forward Transconductance fs DS D b Dynamic C Input Capacitance 320 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 60 pF oss DS GS C Reverse Transfer Capacitance 47 rss V = - 10 V, V = - 8 V, I = - 2.9 A 7.9 12 DS GS D Total Gate Charge Q g 4.7 7.1 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 2.9 A 0.65 gs DS GS D Gate-Drain Charge Q 1.35 gd R Gate Resistance f = 1 MHz 6.5 g Turn-On Delay Time t 15 25 d(on) t Rise Time V = - 10 V, R = 4.4 17 30 r DD L I - 2.3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 21 30 D GEN g d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 510 d(on) t Rise Time V = - 10 V, R = 4.4 10 15 r DD L I - 2.3 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 15 f www.vishay.com Document Number: 68979 2 S10-0548-Rev. B, 08-Mar-10