SI4963BDY-T1-E3 Vishay

SI4963BDY-T1-E3 electronic component of Vishay

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4963BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4963BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI4963BDY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 6.2A 2W High-side power switch in TO-220AB package for automotive applications.
Datasheet:	SI4963BDY-T1-E3 Datasheet (PDF)

Price (USD)

N/A

Obsolete

SI4963BDY-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

MOQ : 2500
Multiples : 2500

Qty	Unit Price
2500	$ 0.8316

N/A

Obsolete

Availability 0

MOQ : 2500
Multiples : 2500

Qty	Unit Price
2500	$ 0.8678

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.909
10	$ 1.6463
100	$ 1.2831
500	$ 1.06
1000	$ 0.8368

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.0752
10	$ 1.6626
100	$ 1.1466
500	$ 0.9056
1000	$ 0.8977
5000	$ 0.8899

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 2.0914
10	$ 1.3509
100	$ 0.9122
500	$ 0.7498
1000	$ 0.735
2500	$ 0.7339

N/A

Obsolete

Availability 0

MOQ : 2500
Multiples : 2500

Qty	Unit Price
2500	$ 0.9667

N/A

Obsolete

Specifications

Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON E E
Transistor Polarity P - Channel P - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Configuration Dual Dual
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current 4.9 A 4.9 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage +/- 12 V +/- 12 V
Power Dissipation 1.1 W 1.1 W
Rds On 32 Mohms 32 Mohms
Fall Time 40 ns 40 ns
Rise Time 40 ns 40 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 80 ns 80 ns

We are delighted to provide the SI4963BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4963BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4963BDY-T1-E3 is a MOSFET transistor manufactured by Vishay. This component is a single N-channel logic level enhancement mode Power Field Effect Transistor (FET) with a low threshold voltage. The SI4963BDY-T1-E3 is rated as a 20V device, with a maximum Drain Current (ID) of 5A and a maximum Drain Source Voltage (VDSS) of 20V. It also has a maximum Power Dissipation of 12W and an RDS (ON) of 8mOhm. It is designed for use in DC-DC converters, power switching circuits, and high-speed switching applications. The SI4963BDY-T1-E3 has a silicon integrated circuit with a high fast switching speed. The component is RoHS compliant and is available in a TO-220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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