SI5403DC-T1-GE3 Vishay

SI5403DC-T1-GE3 electronic component of Vishay
SI5403DC-T1-GE3 Vishay
SI5403DC-T1-GE3 MOSFETs
SI5403DC-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI5403DC-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI5403DC-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI5403DC-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 6.0A 6.3W 30mohm @ 10V
Datasheet: SI5403DC-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.4578 ea
Line Total: USD 1373.4 
Availability : 2910
  
Ship by Tue. 11 Nov to Mon. 17 Nov
QtyUnit Price
3000$ 0.4578

Availability 1818
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 480
Multiples : 1
QtyUnit Price
480$ 0.5426
487$ 0.5342
495$ 0.5256
503$ 0.5172
512$ 0.5085
1000$ 0.4809


Availability 2910
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4578


Availability 4411
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.377
10$ 0.3072
30$ 0.2766
100$ 0.178
500$ 0.1489
1000$ 0.1414

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI5403DC-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5403DC-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI5403DC-T1-GE3 is a 30V, 6.0A, 6.3W, 30mohm MOSFET, made by Vishay. It is a single N-channel, control FET transistor, designed specifically for used in PFC (Power Factor Correction) and other demanding applications. It features a low-input capacitance, low on-resistance and low leakage current, along with excellent gate charge and reverse transfer characteristics. It is rated to tolerate a minimum drain-source voltage of 30V, which makes it ideal for switching and regulating power supplies. It can deliver up to 6.0A of continuous current and 6.3W of power dissipation. Its on-resistance is 30mohm at 10V drain-source voltage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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