New Product Si5418DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0145 at V = 10 V 12 GS RoHS 30 9.5 nC New Thermally Enhanced PowerPAK 0.0185 at V = 4.5 V 12 COMPLIANT GS ChipFET Package - Small Footprint Area PowerPAK ChipFET Single - Low On-Resistance - Thin 0.8 mm Profile 1 2 Marking Code APPLICATIONS D D 3 AI XXX Load Switch, PA Switch, and Battery D D Lot Traceability 4 and Date Code Switch for Portable Applications D D 8 G D Part Code DC-DC Synchronous Rectification 7 S 6 S G 5 Bottom View S Ordering Information: Si5418DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V 30 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS a T = 25 C C 12 a T = 70 C 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 11.6 b, c T = 70 C A 9.3 A I 40 Pulsed Drain Current DM a = 25 C T C 12 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.6 T = 25 C 31 C T = 70 C 20 C Maximum Power Dissipation P W D b, c T = 25 C A 3.1 b, c T = 70 C A 2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R Maximum Junction-to-Ambient t 5 s 34 40 thJA C/W Steady State R 34 Maximum Junction-to-Case (Drain) thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product Si5418DU Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 40 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7.7 A 0.012 0.0145 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.9 A 0.015 0.0185 GS D a g V = 15 V, I = 7.7 A Forward Transconductance 31 S fs DS D b Dynamic Input Capacitance C 1350 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 190 pF oss DS GS Reverse Transfer Capacitance C 80 rss V = 15 V, V = 10 V, I = 11.6 A 20 30 DS GS D Q Total Gate Charge g 9.5 15 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 11.6 A 4.5 gs DS GS D Q Gate-Drain Charge 2.7 gd Gate Resistance R f = 1 MHz 3.5 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 15 V, R = 1.6 10 15 r DD L I 9.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 1.6 10 15 r DD L I 9.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 12 S C A Pulse Diode Forward Current I 40 SM Body Diode Voltage V I = 9.3 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 40 ns rr Body Diode Reverse Recovery Charge Q 19 30 nC rr I = 9.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69822 2 S-81448-Rev. B, 23-Jun-08