X-On Electronics has gained recognition as a prominent supplier of Si5419DU-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si5419DU-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si5419DU-T1-GE3 Vishay

Si5419DU-T1-GE3 electronic component of Vishay
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Part No.Si5419DU-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 12A 31W 20mohm @ 10V
Datasheet: Si5419DU-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5244 ea
Line Total: USD 0.52 
Availability - 28181
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2656
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.319
10 : USD 0.2935
25 : USD 0.2922
100 : USD 0.2645
250 : USD 0.2605
500 : USD 0.2383
1000 : USD 0.2252

2474
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4848
10 : USD 0.4313
30 : USD 0.4046
100 : USD 0.3799
500 : USD 0.3626
1000 : USD 0.355

28181
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5244
10 : USD 0.3921
100 : USD 0.299
500 : USD 0.2507
1000 : USD 0.2174
3000 : USD 0.2024
9000 : USD 0.1932

   
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We are delighted to provide the Si5419DU-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si5419DU-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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0.8 mm Si5419DU Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition a 0.020 at V = - 10 V - 12 GS TrenchFET Power MOSFET - 30 15.5 nC a 0.033 at V = - 4.5 V - 12 New Thermally Enhanced PowerPAK GS ChipFET Package - Small Footprint Area - Low On-Resistance PowerPAK ChipFET Single - Thin 0.8 mm profile Compliant to RoHS Directive 2002/95/EC 1 2 APPLICATIONS S D 3 Load Switch D D 4 D D 8 G D G 7 S Marking Code 6 S 5 BF XXX Lot Traceability and Date Code Part Bottom View D Code P-Channel MOSFET Ordering Information: Si5419DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C C - 12 a T = 70 C C - 12 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 9.9 b, c T = 70 C A A - 7.9 Pulsed Drain Current I - 40 DM a T = 25 C C - 12 Continuous Source-Drain Diode Current I S b, c T = 25 C A - 2.6 T = 25 C 31 C T = 70 C 20 C P Maximum Power Dissipation W D b, c T = 25 C A 3.1 b, c T = 70 C A 2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 34 40 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 34 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 C/W. Document Number: 69001 www.vishay.com S11-0184-Rev. B, 07-Feb-11 1Si5419DU Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 20 A D(on) DS GS V - 10 V, I = - 6.6 A 0.016 0.020 GS D a Drain-Source On-State Resistance R DS(on) V - 4.5 V, I = - 5.1 A 0.027 0.033 GS D a Forward Transconductance g V = - 10 V, I = - 6.6 A 20 S fs DS D b Dynamic Input Capacitance C 1400 iss Output Capacitance C 240V = - 15 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 200 rss V = - 15 V, V = - 10 V, I = - 9.9 A 30 45 DS GS D Total Gate Charge Q g 15.5 24 nC Gate-Source Charge Q 4.5V = - 15 V, V = - 4.5 V, I = - 9.9 A gs DS GS D Gate-Drain Charge Q 7.5 gd Gate Resistance R f = 1 MHz 6.7 g Turn-on Delay Time t 47 70 d(on) Rise Time t 3350 r V = - 15 V, R = 1.9 DD L I - 7.9 A, V = - 4.5 V, R = 1 D GEN g Turn-Off Delay Time t 3045 d(off) Fall Time t 16 25 f ns Turn-On Delay Time t 10 15 d(on) Rise Time t 10 15 r V = - 15 V, R = 1.9 DD L I - 7.9 A, V = - 10 V, R = 1 Turn-Off Delay Time t 40D GEN g 60 d(off) Fall Time t 12 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I 40 SM Body Diode Voltage V I = - 7.9 A, V = 0 V - 0.85 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 25 40 ns rr Body Diode Reverse Recovery Charge Q 15 25 nC rr I = - 7.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 11 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69001 2 S11-0184-Rev. B, 07-Feb-11

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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