New Product Si5458DU Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.041 at V = 10 V 6 TrenchFET Power MOSFET GS 30 2.8 nC 100 % R Tested 0.051 at V = 4.5 V g 6 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK ChipFET Single Load Switch HDD DC/DC 1 2 D D 3 (1, 2, 3, 6, 7, 8) D D 4 D D 8 G Marking Code D 7 S AP XXX 6 S Lot Traceability G and Date Code 5 (4) Part Code (5) Bottom View S Ordering Information: Si5458DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS e T = 25 C 6 C e T = 70 C 6 C Continuous Drain Current (T = 150 C) I J D a, b, e T = 25 C 6 A a, b, e T = 70 C A 6 A I Pulsed Drain Current 20 DM T = 25 C 6 C Continuous Source-Drain Diode Current I S a, b T = 25 C 2.9 A = 25 C T 10.4 C T = 70 C 6.7 C Maximum Power Dissipation P W D a, b T = 25 C A 3.5 a, b T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c t 5 s R 30 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 10 12 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 72 C/W. d. Based on T = 25 C. C e. Package limited. f. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65019 www.vishay.com S09-1392-Rev. A, 20-Jul-09 1New Product Si5458DU Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 32 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 70 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 15 A D(on) DS GS V = 10 V, I = 7.1 A 0.034 0.041 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.3 A 0.042 0.051 GS D a Forward Transconductance g V = 15 V, I = 7.1 A 15 S fs DS D b Dynamic C Input Capacitance 325 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 60 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = 15 V, V = 10 V, I = 7.1 A 69 DS GS D Total Gate Charge Q g 2.8 4.2 nC Q Gate-Source Charge 1.1 gs V = 15 V, V = 4.5 V, I = 7.1 A DS GS D Gate-Drain Charge Q 0.8 gd R Gate Resistance f = 1 MHz 0.6 2.8 5.6 g t Turn-On Delay Time 12 18 d(on) t Rise Time V = 15 V, R = 2.7 13 20 r DD L I 5.6 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 25 d(off) t Fall Time 11 17 f ns t Turn-On Delay Time 48 d(on) t Rise Time V = 15 V, R = 2.7 918 r DD L I 5.6 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 11 20 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 1.2 S C A Pulse Diode Forward Current I 20 SM V I = 5.6 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 11 20 ns rr Q Body Diode Reverse Recovery Charge 48 nC rr I = 5.6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65019 2 S09-1392-Rev. A, 20-Jul-09