1.8 mm8 mm Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ( )I (A) Q (TYP.) DS DS(on) D g Material categorization: a 0.065 at V = 10 V 4 GS For definitions of compliance please see N-Channel 30 2 nC a 0.100 at V = 4.5 V 4 www.vishay.com/doc 99912 GS 0.140 at V = -10 V -3.7 GS P-Channel -30 2.2 nC APPLICATIONS 0.235 at V = -4.5 V -2.8 GS Available DC/DC for portable applications 1206-8 ChipFET Dual Load switch D 1 D 1 8 D 2 7 D 2 S 6 D 2 1 5 1 2 S 1 3 G 2 G 1 4 S 2 1111 G G 1 2 Top View Bottom View Marking Code: EF S 1 D 2 Ordering Information: N-Channel MOSFET P-Channel MOSFET Si5504BDC-T1-E3 (Lead (Pb)-free) Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNELP-CHANNELUNIT Drain-Source Voltage V 30 -30 DS V Gate-Source Voltage V 20 GS a T = 25 C 4 -3.7 C T = 85 C 3.8 -2.7 C Continuous Drain Current (T = 150 C) I J D b,c b,c T = 25 C 3.7 -2.5 A b,c b,c T = 85 C 2.6 -1.8 A A Pulsed Drain Current I 10 -10 DM T = 25 C 2.5 -2.5 C Source Drain Current Diode Current I S b,c b,c T = 25 C 1.3 -1.3 A T = 25 C 3.12 3.1 C T = 85 C 2 2 C Maximum Power Dissipation P W D b,c b,c T = 25 C 1.5 1.5 A b,c b,c T = 85 C 0.8 0.8 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C d,e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b,f Maximum Junction-to-Ambient t 5 s R 70 85 70 85 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 33 40 33 40 thJF Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 120 C/W. S13-2463-Rev. C, 02-Dec-13 Document Number: 74483 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.0 mm30 mm Si5504BDC www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 30 - - GS D Drain-Source Breakdown Voltage V V DS V = 0 V, I = -250 A P-Ch -30 - - GS D I = 250 A N-Ch - 27 - D V Temperature Coefficient V /T DS DS J I = -250 A P-Ch - -30 - D mV/C I = 250 A N-Ch - -5 - D V Temperature Coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 3.5 - D V = V , I = 250 A N-Ch 1.5 - 3 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = -250 A P-Ch -1.5 - -3 DS GS D N-Ch - - 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - -100 V = 30 V, V = 0 V N-Ch - - 1 DS GS V = -30 V, V = 0 V P-Ch - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 85 C N-Ch - - 5 DS GS J V = -30 V, V = 0 V, T = 85 C P-Ch - - -5 DS GS J V 5 V, V = 10 V N-Ch 10 - - DS GS b On-State Drain Current I A D(on) V -5 V, V = -10 V P-Ch -10 - - DS GS V = 10 V, I = 3.1 A N-Ch - 0.053 0.065 GS D V = -10 V, I = -2.1 A P-Ch - 0.112 0.140 GS D b Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 1 A N-Ch - 0.081 0.100 GS D V = -4.5 V, I = -0.43 A P-Ch - 0.188 0.235 GS D V = 15 V, I = 3.1 A N-Ch - 5 - DS D b Forward Transconductance g S fs V = -15 V, I = -2.1 A P-Ch - 3.5 - DS D a Dynamic N-Ch - 220 - Input Capacitance C iss N-Channel P-Ch - 170 - V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch - 50 - Output Capacitance C pF oss P-Ch - 50 - P-Channel V = -15 V, V = 0 V, f = 1 MHz N-Ch - 25 - DS GS Reverse Transfer Capacitance C rss P-Ch - 31 - V = 15 V, V = 10 V, I = 3.6 A N-Ch - 4.5 7 DS GS D V = -15 V, V = -10 V, I = -2.5 A P-Ch - 4.5 7 DS GS D Total Gate Charge Q g N-Ch - 2 3 N-Channel P-Ch - 2.2 3.5 nC V = 15 V, V = 4.5 V, I = 3.6 A DS GS D N-Ch - 0.7 - Gate-Source Charge Q gs P-Ch - 0.7 - P-Channel V = -15 V, V = -4.5 V, I = -2.5 A N-Ch - 0.7 - DS GS D Gate-Drain Charge Q gd P-Ch - 1 - N-Ch - 3 - Gate Resistance R f = 1 MHz g P-Ch - 13 - Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. S13-2463-Rev. C, 02-Dec-13 Document Number: 74483 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000