X-On Electronics has gained recognition as a prominent supplier of SI5855DC-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI5855DC-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI5855DC-T1-GE3 Vishay

SI5855DC-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI5855DC-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.9A; 0.6W
Datasheet: SI5855DC-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.535 ea
Line Total: USD 2.54

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 2.535
3 : USD 1.7225
41 : USD 0.7459

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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We are delighted to provide the SI5855DC-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI5855DC-T1-GE3 and other electronic components in the MOSFET category and beyond.

The Vishay SI5855DC-T1-GE3 is a transistor-based part featuring a high-speed p-channel metal-oxide-semiconductor field-effect transistor (P-MOSFET) along with a Schottky diode. Operating with an unipolar configuration, it supports a negative supply voltage of -20V, with a current rating of -1.9A and a low power dissipation of 0.6W. It is RoHS-compliant and suitable for a variety of high performance applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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