SI6435ADQ-T1-E3 Vishay

SI6435ADQ-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI6435ADQ-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6435ADQ-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI6435ADQ-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 5.5A 1.5W Ultra-low VF Schottky barrier rectifier, 1A I/O, 200mV VF, RoHS/halogen-free.
Datasheet:	SI6435ADQ-T1-E3 Datasheet (PDF)

Price (USD)

3000: USD 0.4247 ea
Line Total: USD 1274.1

Availability : 0

Qty	Unit Price
3000	$ 0.4247

SI6435ADQ-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Mon. 11 Aug to Fri. 15 Aug

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 1.7388
10	$ 1.4515
25	$ 1.1718
100	$ 1.0055
250	$ 0.877
500	$ 0.824

Availability 0

Ship by Mon. 11 Aug to Fri. 15 Aug

MOQ : 3000
Multiples : 1

Qty	Unit Price
3000	$ 0.4247

We are delighted to provide the SI6435ADQ-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6435ADQ-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI6435ADQ-T1-E3 is an N-channel power MOSFET from Vishay Intertechnology. It is designed for applications requiring low drain-source on-resistance, high speed switching, and high voltage. This FET has an RDS(ON) of 6.4 mO, an ID of 4.8A, a breakdown voltage of 40V, and a maximum operating temperature of 175°C. It is packaged in an 8-lead SOT-22 package, making it suited for compact designs.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 4.7 A 4.7 A
Vds - Drain-Source Breakdown Voltage - 30 V - 30 V
Rds On - Drain-Source Resistance 30 mOhms 30 mOhms
Transistor Polarity p - channel p - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.5 W 1.5 W
Mounting Style smd/smt smd/smt
Package / Case TSSOP - 8 TSSOP - 8
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename trenchfet trenchfet
Configuration single single
Series si6435adq si6435adq
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 10 ns 10 ns
Rise Time 10 ns 10 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 42 ns 42 ns