Si6463BDQ Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.015 at V = - 4.5 V - 7.4 GS TrenchFET Power MOSFET - 20 0.020 at V = - 2.5 V - 6.3 GS Compliant to RoHS Directive 2002/95/EC 0.027 at V = - 1.8 V - 5.5 GS S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6463BDQ S S 3 6 G D 4 5 D Top View P-Channel MOSFET Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 7.4 - 6.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.9 - 4.9 A A I Pulsed Drain Current (10 s Pulse Width) - 30 DM a I - 1.35 - 0.95 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 1.05 A a P W Maximum Power Dissipation D T = 70 C 1.0 0.67 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 65 83 a R Maximum Junction-to-Ambient thJA Steady State 100 120 C/W R Maximum Junction-to-Foot Steady State 46 56 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72018 www.vishay.com S10-2138-Rev. C, 20-Sep-10 1Si6463BDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = - 250 A - 0.45 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 7.4 A 0.011 0.015 GS D a R V = - 2.5 V, I = - 6.3 A 0.015 0.020 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 5.5 A 0.020 0.027 GS D a g V = - 15 V, I = - 7.4 A 34 S Forward Transconductance fs DS D a V I = - 1.3 A, V = 0 V - 0.64 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 40 60 g Q V = - 10 V, V = - 5 V, I = - 7.4 A Gate-Source Charge 5.2 nC gs DS GS D Q Gate-Drain Charge 8 gd t Turn-On Delay Time 35 55 d(on) Rise Time t 40 60 V = - 10 V, R = 15 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 190 300 ns d(off) t Fall Time 90 150 f t I = - 1.3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 75 120 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 V = 5 V thru 2 V GS 24 24 18 18 1.5 V 12 12 T = 125 C C 6 6 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72018 2 S10-2138-Rev. C, 20-Sep-10 I - Drain Current (A) D I - Drain Current (A) D